Thermo-Mechanical Characterization of Au-In Transient Liquid Phase Bonding Die-Attach

Grummel, Brian; Shen, Z. John; Mustain, Habib A.; Hefner, Allen R.

doi:10.1109/tcpmt.2013.2239702

Cited by 28 publications

(9 citation statements)

References 25 publications

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“…Transient Liquid Phase Bonding (TLPB) realized by bonding of parent materials with pre-deposited low-melting metal layer, whereas Transient Liquid Phase Soldering (TLPS) involves usage of the printed standard soft solders as interlayer for intermetallic phase (IMP) formation [77], [86]- [89]. The diffusion solder have Ag/In [90], [91], Ag/Sn [92], Au/In [93], [94], Au/ Sn [95], [96], Cu/Sn [97], [98], and Ni/Sn [99]. Considered the cost and environment friendly, the Cu-Sn alloy solder has been a good candidate for high temperature applications.…”

Section: Au100mentioning

confidence: 99%

A Review of SiC Power Module Packaging: Layout, Material System and Integration

2017

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Abstract-Silicon-Carbide (SiC) devices with superior performance over traditional silicon power devices have become the prime candidates for future high-performance power electronics energy conversion. Traditional device packaging becomes a limiting factor in fully realizing the benefits offered by SiC power devices, and thus, improved and advanced packaging structures are required to bridge the gap between SiC devices and their applications. This paper provides a review of the state-of-art advanced module packaging technologies for SiC devices with the focuses on module layout, packaging material system, and module integration trend, and links these packaging advancements to their impacts on the SiC device performances. Through this review, the paper discusses main challenges and potential solutions for SiC modules, which is critical for future SiC applications.Index Terms-Packaging material system, power module integration, SiC advanced packaging.

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Section: Au100mentioning

confidence: 99%

A Review of SiC Power Module Packaging: Layout, Material System and Integration

2017

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“…This approach has been demonstrated for the packaging of high-temperature, wide-bandgap devices [129,140,141,142], image sensors [143], and in-chip stacking applications [144,145,146]. More recently, the Au-In approach has also been demonstrated for WLVP using passive substrates [147,148].…”

Section: Bonding Approachesmentioning

confidence: 99%

Wafer-Level Vacuum Packaging of Smart Sensors

Hilton

Temple

2016

Sensors

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The reach and impact of the Internet of Things will depend on the availability of low-cost, smart sensors—“low cost” for ubiquitous presence, and “smart” for connectivity and autonomy. By using wafer-level processes not only for the smart sensor fabrication and integration, but also for packaging, we can further greatly reduce the cost of sensor components and systems as well as further decrease their size and weight. This paper reviews the state-of-the-art in the wafer-level vacuum packaging technology of smart sensors. We describe the processes needed to create the wafer-scale vacuum microchambers, focusing on approaches that involve metal seals and that are compatible with the thermal budget of complementary metal-oxide semiconductor (CMOS) integrated circuits. We review choices of seal materials and structures that are available to a device designer, and present techniques used for the fabrication of metal seals on device and window wafers. We also analyze the deposition and activation of thin film getters needed to maintain vacuum in the ultra-small chambers, and the wafer-to-wafer bonding processes that form the hermetic seal. We discuss inherent trade-offs and challenges of each seal material set and the corresponding bonding processes. Finally, we identify areas for further research that could help broaden implementations of the wafer-level vacuum packaging technology.

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“…Ag, Au, Cu, Co or Ni), (3) intermetallic compounds (IMCs) formation that leads to isothermal solidification and (4) homogenization of the interconnection structure. Au-Sn and Cu-Sn based metallurgies are the most commonly utilized material options for SLID out of the several different demonstrated binary systems; Ag-In, [6][7][8] Au-In, 3,[9][10][11][12][13][14] Cu-In, 15 Ag-Sn, 16,17 Ni-Sn, 3,[18][19][20] Au-Sn [21][22][23][24][25][26][27][28] and Cu-Sn. 5,[29][30][31][32][33][34][35][36][37][38] Au-Sn and Cu-Sn systems have been demonstrated to form mechanically and chemically reliable bonds at bonding temperatures close to 300°C.…”

Section: Introductionmentioning

confidence: 99%

Wafer Level Solid Liquid Interdiffusion Bonding: Formation and Evolution of Microstructures

Vuorinen

Dong

Ross

et al. 2020

Journal of Elec Materi

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Wafer-level solid liquid interdiffusion (SLID) bonding, also known as transient liquid-phase bonding, is becoming an increasingly attractive method for industrial usage since it can provide simultaneous formation of electrical interconnections and hermetic encapsulation for microelectromechanical systems. Additionally, SLID is utilized in die-attach bonding for electronic power components. In order to ensure the functionality and reliability of the devices, a fundamental understanding of the formation and evolution of interconnection microstructures, as well as global and local stresses, is of utmost importance. In this work a low-temperature Cu-In-Sn based SLID bonding process is presented. It was discovered that by introducing In to the traditional Cu-Sn metallurgy as an additional alloying element, it is possible to significantly decrease the bonding temperature. Decreasing the bonding temperature results in lower CTE induced global residual stresses. However, there are still several open issues to be studied regarding the effects of dissolved In on the physical properties of the Cu-Sn intermetallics. Additionally, partially metastable microstructures were observed in bonded samples that did not significantly evolve during thermal annealing. This indicates the Cu-In-Sn SLID bond microstructure is extremely stable.

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Thermo-Mechanical Characterization of Au-In Transient Liquid Phase Bonding Die-Attach

Cited by 28 publications

References 25 publications

A Review of SiC Power Module Packaging: Layout, Material System and Integration

A Review of SiC Power Module Packaging: Layout, Material System and Integration

Wafer-Level Vacuum Packaging of Smart Sensors

Wafer Level Solid Liquid Interdiffusion Bonding: Formation and Evolution of Microstructures

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