Thermo-electromigration phenomenon of solder bump, leading to flip-chip devices with 5,000 bumps

Nakagawa, K.; Baba, Shinji; Watanabe, Masaki; Matsushima, H.; Harada, Kozo; Hayashi, Eiji; Wu, Qiang; Maeda, Ayumi; Nakanishi, Masakazu; Ueda, N.

doi:10.1109/ectc.2001.927925

Cited by 9 publications

(5 citation statements)

References 4 publications

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“…[1][2][3] Recent studies on electromigration in solder materials mainly focus on electric current effects upon interfacial reactions and the eutectic SnPb solder. [4][5][6][7][8][9][10][11] Because of the heightened awareness of environmental concerns, Pb-containing solders will be replaced by Pb-free solders. The SnAg3.8Cu0.7 solder will be one of the most promising lead-free solders for the microelectronic packaging industry.…”

Section: Introductionmentioning

confidence: 99%

Electromigration study in SnAg3.8Cu0.7 solder joints on Ti/Cr-Cu/Cu under-bump metallization

Hsu

Shao

Yang

et al. 2003

Journal of Elec Materi

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This paper investigates the electromigration-induced failures of SnAg3.8Cu0.7 flip-chip solder joints. An under-bump metallization (UBM) of a Ti/Cr-Cu/Cu trilayer was deposited on the chip side, and a Cu/Ni(P)/Au pad was deposited on the BT board side. Electromigration damages were observed in the bumps under a current density of 2 ϫ 10 4 A/cm 2 and 1 ϫ 10 4 A/cm 2 at 100°C and 150°C. The failures were found to be at the cathode/chip side, and the current crowding effect played an important role in the failures. Copper atoms were found to move in the direction of the electron flow to form intermetallic compounds (IMCs) at the interface of solder and pad metallization as a result of current stressing.

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Section: Introductionmentioning

confidence: 99%

Electromigration study in SnAg3.8Cu0.7 solder joints on Ti/Cr-Cu/Cu under-bump metallization

Hsu

Shao

Yang

et al. 2003

Journal of Elec Materi

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“…The fact that the value is negative indicates that for the particular geometries and current distributions of these test structures, the passivation opening is not an appropriate area to use. Another study using the same UBM metallurgy found n to be 1.8 [5]. It was mentioned earlier that the large standard deviation of the 470 mA, 76 μm, 110 μm experimental leg may be indicative of a bimodal distribution.…”

Section: It Is Clear From the Values In The Table As Well As Frommentioning

confidence: 91%

“…It has been found that when electrons flow from the silicon metallization, voiding begins at the underbump metallization (UBM) and intermetallic region. Electromigration failures occur much earlier for this case than for the case of electron flow into the silicon [4,5]. A very important aspect of bump electromigration is current crowding in the region where the electrons enter the bump from the silicon metallization through the opening in the silicon passivation [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Geometry Effects on the Electromigration of Eutectic SN/PB Flip-Chip Solder Bumps

Eaton

Rowatt

Dauksher

2006

2006 IEEE International Reliability Physics Symposium Proceedings

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This work investigates the effect of passivation opening diameter and underbump metallization (UBM) diameter on the electromigration (EM) resistance of Sn/Pb eutectic solder bumps. For the bump geometries studied, the electromigration lifetime depends strongly on the UBM area but weakly on the passivation opening area. The applicability of Black's model for extrapolating lifetime from accelerated currents to operating currents is investigated. The thermal activation energy, E A , is approximately 1.0 eV and the current density exponent, n, is approximately 2.0. While Black's model for current density acceleration appears to apply, the current density exponent may not be transferable between bumps of different geometries. A physical model of voiding within the bump using finite element analysis is proposed to explain the observed results.

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“…Another detractor for flip-chip technology is electromigration failure in flip-chip solder and ACA joints under high current density, which is a serious reliability concern for power devices for automotive applications. [185][186][187] …”

Section: Wire Bondingmentioning

confidence: 99%

Ultrathin Wafer Pre-Assembly and Assembly Process Technologies: A Review

Marks

Hassan

Cheong

2015

Critical Reviews in Solid State and Materials Sciences

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Ultrathin silicon wafer technology is reviewed in terms of the semiconductor applications, critical challenges, and wafer pre-assembly and assembly process technologies and their underlying mechanisms. Mechanical backgrinding has been the standard process for wafer thinning in the semiconductor industry owing to its low cost and productivity. As the thickness requirement of wafers is reduced to below 100 mm, many challenges are being faced due to wafer/die bow, mechanical strength, wafer handling, total thickness variation (TTV), dicing, and packaging assembly. Various ultrathin wafer processing and assembly technologies have been developed to address these challenges. These include wafer carrier systems to handle ultrathin wafers; backgrinding subsurface damage and surface roughness reduction, and post-grinding treatment to increase wafer/die strength; improved wafer carrier flatness and backgrinding auto-TTV control to improve TTV; wafer dicing technologies to reduce die sidewall damage to increase die strength; and assembly methods for die pick-up, die transfer, die attachment, and wire bonding. Where applicable, current process issues and limitations, and future work needed are highlighted.

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Thermo-electromigration phenomenon of solder bump, leading to flip-chip devices with 5,000 bumps

Cited by 9 publications

References 4 publications

Electromigration study in SnAg3.8Cu0.7 solder joints on Ti/Cr-Cu/Cu under-bump metallization

Electromigration study in SnAg3.8Cu0.7 solder joints on Ti/Cr-Cu/Cu under-bump metallization

Geometry Effects on the Electromigration of Eutectic SN/PB Flip-Chip Solder Bumps

Ultrathin Wafer Pre-Assembly and Assembly Process Technologies: A Review

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