Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe₂Chain Crystals

Abstract

Thermally stimulated current measurements were carried out on as-grown TlInSe 2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s −1 . The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 × 10 13 and 3.4 × 10 12 cm −3 ) and capture cross section (4.1 × 10 −28 and 2.9 × 10 −26 cm 2 ) of the traps were estimated for peaks A and B, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.

О фотопроводимости TlInSe-=SUB=-2-=/SUB=-

“…Среди электрических свойств можно отметить нелинейное и отрицательное сопротивление, S-образность вольт-амперных характе-ристик, а также эффект переключения и памяти [8,9]. Фотоэлектрические свойства этих соединений исследо-вались в работах [10][11][12][13][14][15][16]. Разнообразие электрических и фотоэлектрических свойств в этих работах объяс-няется наличием в полупроводнике различных уров-ней рекомбинации и прилипания.…”