In this Part 2 of this series of articles, the procedure proposed in Part 1, namely a new parameter extraction technique of the shunt resistance (R sh ) and saturation current (I sat ) of a current-voltage (I-V ) measurement of a solar cell, within the one-diode model, is applied to CdS-CdTe and CIGS-CdS solar cells. First, the Cheung method is used to obtain the series resistance (R s ) and the ideality factor n. Afterwards, procedures A and B proposed in Part 1 are used to obtain R sh and I sat . The procedure is compared with two other commonly used procedures. Better accuracy on the simulated I-V curves used with the parameters extracted by our method is obtained. Also, the integral percentage errors from the simulated I-V curves using the method proposed in this study are one order of magnitude smaller compared with the integral percentage errors using the other two methods.
The most commonly used commercial conducting glass is the coated SnO2:F glass substrate. However, it usually presents poor morphological properties and therefore is not adequate for solar cell applications. In this work, we report results about the morphological properties improvement of commercial conductive glass by the deposition of a SnO2 buffer layer by spray pyrolysis technique. The use of a high resistivity transparent layer (buffer) onto low resistivity transparent oxide has been found to improve the solar cell performance. The methodology for improving film morphology through the deposition of SnO2 buffer layers by spray pyrolysis technique, with appropriate electro-optical properties, is presented. The solar cell results related to the use of an automatized spray pyrolysis system are presented.
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