Thermally stimulated conductivity of Cu3BiS3 thin films deposited by co-evaporation: determination of trap parameters related to defects in the gap

Abstract

Cu 3 BiS 3 thin films were produced by evaporating precursor Cu and Bi species in sulfur atmosphere through a two-stage process. Thermally stimulated current (TSC) measurements were carried out on as-grown Cu 3 BiS 3 crystals in the temperature range of 150-400 K. The measurements were performed while increasing temperature at a rate of 5 K/min. Analysis of thermal power measurements at room temperature enabled the type of conductivity of the material, respectively. The spectra obtained from the TSC showed the presence of trapping centers associated with the peaks in the current curves as a function of temperature. Transport mechanisms as hopping and thermally active carriers were identified for low-and high-temperature regions, respectively. Three trapping levels around 1.04 eV were detected from the TSC spectra. These levels in Cu 3 BiS 3 crystals may be associated to the presence of structural defects and unintentional impurities during preparation processes. The trap parameters were determined by various analysis methods, and they agree well with each other. A correlation between electrical properties and defects in the material were also studied.

A comprehensive review on synthesis and characterizations of Cu3BiS3 thin films for solar photovoltaics

“…Numerous evaporation methods such as coevaporation, fast evaporation, thermal evaporation, and electron beam (EB) [21][22][23][24][25][26][27][28][29][30][31][32] have been employed for the deposition of Cu 3 BiS 3 thin films. Cu 3 BiS 3 thin films were deposited using two different attitudes:…”

“…Furthermore, Dussan et al [28] prepared Cu 3 BiS 3 thin films on SLG substrates by evaporating Cu and Bi species in a sulfur environment through a two-stage process by varying the synthesis temperature between 473-573 K. The thermally stimulated current (TSC) spectrum showed three trapping levels around 1.04 eV. In Cu 3 BiS 3 semiconductor, these three trapping levels may be associated with the presence of structural defects and unintentional impurities.…”

Hydrophilic Cu3BiS3 Nanoparticles for Computed Tomography Imaging and Photothermal Therapy

“…[ 24,33,34 ] Several methods have been reported for the synthesis of Cu 3 BiS 3 nanomaterials, including solvothermal route, [ 35,36 ] cyclic microwave radiation, [ 37 ] and coevaporation. [ 38,39 ] There are few papers reporting the synthesis of Cu 3 BiS 3 nanostructures using thermal decomposition of precursor complexes. Here, hydrophobic Cu 3 BiS 3 NPs were synthesized by the thermal decomposition of Cu(S 2 CNEt 2 ) 2 and Bi(S 2 CNEt 2 ) 3 precursors in oily mixed solvent and then the produced Cu 3 BiS 3 NPs were coated with amphiphilic polyvinylpyrrolidone (PVP) through the ligand exchange.…”

“…Several methods have been reported for the synthesis of Cu 3 BiS 3 nanomaterials, including solvothermal route, cyclic microwave radiation, and coevaporation . There are few papers reporting the synthesis of Cu 3 BiS 3 nanostructures using thermal decomposition of precursor complexes.…”

Copper—antimony and copper—bismuth chalcogenides—Research opportunities and review for solar photovoltaics

“…ContinuedTable 5. Trap energies in Cu 3 BiS 3 as determined from thermally stimulated current measurements 113. The temperatures T m are the signal peaks, while the trap energies E t were evaluated from the data by two methods and with some consistency.…”