Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3

Kim, Hoon Min; Kim, Useong; Park, Chulkwon; Kwon, Hanjung; Char, K.

doi:10.1063/1.4952609

Cited by 30 publications

(23 citation statements)

References 28 publications

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“…We found that BaSn 0.9 Co 0.1 O 3 films grown on BaSn 0.97 Sb 0.03 O 3 single crystals, p-BaSn 0.9 Co 0.1 O 3 /n-BaSn 0.97 Sb 0.03 O 3 diodes, exhibit a rectification ratio of 2.9 × 10 3 ( ± 2 V) at room temperature (Figure 10a,b). We found a similar rectification ratio even after thermal annealing at 200 • C. This result and recent reports of pn diodes made of p-(Ba,K)SnO 3 films (Figure 10e,f ) (128) indicate that thermally stable pn junctions can be fabricated from p-type TOSs based on the BaSnO 3 system (by either Ba-or Snsite doping), increasing the application potential of perovskite stannates. For more information on pn diodes in Figure 10, please refer to the Supplemental Text.…”

Section: Pn Junctionssupporting

confidence: 87%

Transparent Perovskite Barium Stannate with High Electron Mobility and Thermal Stability

Lee

Kim

Kang

et al. 2017

Annu. Rev. Mater. Res.

118

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Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have become necessary materials for a variety of applications in the information and energy technologies, ranging from transparent electrodes to active electronics components. Perovskite barium stannate (BaSnO 3 ), a new TCO or TOS system, is a potential platform for realizing optoelectronic devices and observing novel electronic quantum states due to its high electron mobility, excellent thermal stability, high transparency, structural versatility, and flexible doping controllability. This article reviews recent progress in the doped BaSnO 3 system, discussing the wide physical properties, electron-scattering mechanism, and demonstration of key semiconducting devices such as pn diodes and field-effect transistors. Moreover, we discuss the pathways to achieving two-dimensional electron gases at the interface between BaSnO 3 and other perovskite oxides and describe remaining challenges for observing novel quantum phenomena at the heterointerface. 17.1

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Section: Pn Junctionssupporting

confidence: 87%

Transparent Perovskite Barium Stannate with High Electron Mobility and Thermal Stability

Lee

Kim

Kang

et al. 2017

Annu. Rev. Mater. Res.

118

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“…For transparent conducting materials, we focus on finding p-type (hole conducting) examples, since these are rather scarce compared to n-type. [37][38][39][40][41] In addition to large band gap (> 3 eV), low hole effective mass is a prerequisite since good conductivity is needed.…”

Section: Compounds As Potential Transparent Conductorsmentioning

confidence: 99%

“…38 It has been overcome through specific chemistries, such has that of monovalent Cu and divalent Sn, and through particularly stable crystal structures such as that of BaSnO3. [37][38][39][40] Five compounds (BiOCl, BiOBr, SbOF, Sb4O5Cl2 and Sb4O5Br2, Fig. 6) are found to possess optical band gaps larger than 3 eV as well as reasonable hole effective masses (below 1.5 m0 expect for BiOBr with ~1.7 m0).…”

Section: Compounds As Potential Transparent Conductorsmentioning

confidence: 99%

Bismuth and antimony-based oxyhalides and chalcohalides as potential optoelectronic materials

et al. 2018

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In the last decade the ns 2 cations (e.g., Pb 2+ and Sn 2+ ) based halides have emerged as one of the most exciting new classes of optoelectronic materials, as exemplified by for instance hybrid perovskite solar absorbers. These materials not only exhibit unprecedented performance in some cases, but they also appear to break new ground with their unexpected properties, such as extreme tolerance to defects. However, because of the relatively recent emergence of this class of materials, there remain many yet to be fully explored compounds. Here we assess a series of bismuth/antimony oxyhalides and chalcohalides using consistent first principles methods to ascertain their properties and obtain trends. Based on these calculations, we identify a subset consisting of three types of compounds that may be promising as solar absorbers, transparent conductors, and radiation detectors. Their electronic structure, connection to the crystal geometry, and impact on band-edge dispersion and carrier effective mass are discussed. Table S1. Space group, electronic band gaps, effective masses of carriers and formation energy ∆ of the 31 bismuth/antimony oxyhalides and chalcohalides considered in the current work. For the effective masses, the "*" means a very large number.

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“…15,16 Such a high mobility was described to arise from the large dispersive Sn 5s derived conduction band (CB) states. 17,18 These intrinsic superior properties render BSO of considerable interest as a promising earth-abundant alternative to industry standard In 2 O 3 based transparent electrodes and also as a new platform for fabricating high performance transparent p-n diodes, 10,[19][20][21] field effect transistors, 10,[22][23][24] and an electron transporting layer in organic perovskite solar cells. 25 Chambers et al 26 found a favorable conduction band offsets at the interfaces of BSO with SrTiO 3 and LaAlO 3 , opening up the possibility of achieving 2-dimensinal electron gas by modulation doping and polar discontinuity doping.…”

Section: Interface Energy Band Alignment At the All-transparent P-n Hmentioning

confidence: 99%

Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3

Zhang

Han

Luo

et al. 2018

Applied Physics Letters

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Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3

Cited by 30 publications

References 28 publications

Transparent Perovskite Barium Stannate with High Electron Mobility and Thermal Stability

Transparent Perovskite Barium Stannate with High Electron Mobility and Thermal Stability

Bismuth and antimony-based oxyhalides and chalcohalides as potential optoelectronic materials

Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3

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