2018
DOI: 10.1063/1.5029422
|View full text |Cite
|
Sign up to set email alerts
|

Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3

Abstract: DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

3
14
1

Year Published

2019
2019
2023
2023

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 30 publications
(18 citation statements)
references
References 58 publications
3
14
1
Order By: Relevance
“…As shown in Fig. 2f, The VB position is shifted upward from 2.48 eV for BiVO 4 to 2.23 eV for BP/BiVO 4 , implying that the positrons (holes) are the dominant carriers across the p / n junction under reverse bias 36 . According to the above experimental and theoretical results, Fig.…”
Section: Resultsmentioning
confidence: 88%
“…As shown in Fig. 2f, The VB position is shifted upward from 2.48 eV for BiVO 4 to 2.23 eV for BP/BiVO 4 , implying that the positrons (holes) are the dominant carriers across the p / n junction under reverse bias 36 . According to the above experimental and theoretical results, Fig.…”
Section: Resultsmentioning
confidence: 88%
“…However, given continued studies of the stability of dopants in BaSnO 3 [130], it also seems possible that atmospheric exposure led to the depletion of the surface carriers, which would explain the absence of observed carriers in the lab-source experiments. Carriers in identically doped BaSnO 3 were later observed in a lab-source experiment [131], lending further credence to this possibility. It is also possible that the HAXPES experiments [125] were successful due to the greater probe depth for hard X-rays, which overcomes the surface depletion.…”
Section: Future Directions For In Situ and Related Studiesmentioning
confidence: 77%
“…However, given continued studies of the stability of dopants in BaSnO3 124 , it also seems possible that atmospheric exposure led to depletion of the surface carriers, which would explain the absence of observed carriers in the lab-source experiments. Carriers in identically doped BaSnO3 were later observed in a lab-source experiment 125 , lending further credence to this possibility. It is also possible that the HAXPES experiments 119 were successful due to the greater probe depth for hard X-rays, which overcomes the surface depletion.…”
Section: Future Directions For In Situ and Related Studiesmentioning
confidence: 78%