Transparent Perovskite Barium Stannate with High Electron Mobility and Thermal Stability

Abstract

Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have become necessary materials for a variety of applications in the information and energy technologies, ranging from transparent electrodes to active electronics components. Perovskite barium stannate (BaSnO 3 ), a new TCO or TOS system, is a potential platform for realizing optoelectronic devices and observing novel electronic quantum states due to its high electron mobility, excellent thermal stability, high transparency, structural versatility, and flexible doping controllability. This article reviews recent progress in the doped BaSnO 3 system, discussing the wide physical properties, electron-scattering mechanism, and demonstration of key semiconducting devices such as pn diodes and field-effect transistors. Moreover, we discuss the pathways to achieving two-dimensional electron gases at the interface between BaSnO 3 and other perovskite oxides and describe remaining challenges for observing novel quantum phenomena at the heterointerface. 17.1

Strain tuning of plasma frequency in vanadate, niobate, and molybdate perovskite oxides

“…For example, perovskite BaSnO 3 has drawn significant recent attention because of its record breaking mobility. 11 A common shortcoming of most transparent conducting oxides is that they rely on doping or alloying a wide bandgap semiconductor. This approach is limited because of possible doping bottlenecks and reduced mobility due to scattering by impurity atoms.…”

Effect of oxygen pressure on the structural and optical properties of BaSnO3 films prepared by pulsed laser deposition method

“…BaSnO3 has three-dimensional framework of corner-sharing SnO6 octahedra, having a linear Sn-O-Sn bonding angle 180° with ideal cubic Pm3m space group [7]. By doping, with suitable dopants materials the properties of the BaSnO3 can be modified in a wide range due to its high substitutional flexibility [8,9].…”

Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3

“…In summary, we have demonstrated that the electron transport properties of the LBSO should play not only as electron acceptors but also ionized impurities, they may increase the scattering cross section of the electrons and contribute to the mobility suppression [21][22][23] . We hope to clarify the effect of Sn valence state on the electron mobility of LBSO films in near future.…”