Thermally stable CVD HfO/sub x/N/sub y/ advanced gate dielectrics with poly-Si gate electrode

Spectroscopic analysis of the process‐dependent microstructure of ultra‐thin high‐k gate dielectric film systems

“…16 It is found that Hf-N bonds in reactive sputtered (Hf target in Ar/N 2 /O 2 mixed ambient) HfO x N y films are not stable during PDA, compared with CVD HfO x N y films, owing to the substitutional characteristics of oxygen, resulting in significant loss of nitrogen from the bulk films. 17,18 This is consistent with the indication that two types of Hf-N bonds of different energies may be formed. 19 One concern centers on the effective transformation of conductive HfN into the desired dielectric produced via oxidation and the avoidance of electrically nanostructured heterogeneous (ENH) HfO x N y compositions in which conductive nanoscale inclusions are embedded in a dielectric matrix.…”

Structural and optical properties of nitrogen-incorporated HfO2 gate dielectrics deposited by reactive sputtering

“…However, the high permeability to oxygen during high temperature postprocessing causes equivalent oxide thickness (EOT) scaling and reliability concerns [10,11]. Recently, there have been several reports on HfO 2 incorporated with nitrogen [12][13][14][15].…”

Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode

“…MOS devices with CVD HfOxNy and HfO gate dielectric films were fabricated on (100) n-or p-type Si-substrates using conventional MOS process flow [16]. After the standard RCA cleaning with final hydrofluoric acid (HF) dip, the HfOxNy was deposited at C using a tetrakis diethylamino hafnium (TDEAH: [Hf C H N ]) precursor with N carrier gas and NH .…”