Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode

Choi, Chang Hwan; Jeon, T.S.; Clark, Robert D.; Kwong, D. L.

doi:10.1109/led.2003.810881

Cited by 77 publications

(40 citation statements)

References 13 publications

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“…[3][4][5][6][7][8][9] Nitrogen also has a beneficial effect on electrical properties, increasing the dielectric constant, 8 reducing the leakage currents, and improving the electrical stability. [9][10][11][12][13][14] The leakage current reduction occurs at lower fields, where the Poole-Frenkel hopping and trap-assisted tunnelling 15 are each found to be reduced.…”

Section: Introductionmentioning

confidence: 99%

Passivation of oxygen vacancy states in HfO2 by nitrogen

Xiong

Robertson

Clark

2006

Journal of Applied Physics

146

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. Nitrogen is known to reduce leakage currents and charge trapping in high-dielectric-constant gate oxides such as HfO 2 . We show that this occurs because nitrogen, substituting for oxygen atoms next to oxygen vacancy sites, repels the occupied gap states due to the neutral and positively charged oxygen vacancies out of the band gap into its conduction band. The state of the negatively charge vacancy is also repelled upwards but remains as a shallow gap state. This occurs because the vacancy becomes effectively positively charged; the adjacent Hf ions relax outwards from the vacancy and shift its states upwards. We show this using ab initio calculation methods which do not require an empirical correction to the band gap.

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Section: Introductionmentioning

confidence: 99%

Passivation of oxygen vacancy states in HfO2 by nitrogen

Xiong

Robertson

Clark

2006

Journal of Applied Physics

146

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“…HfON can also be formed by N 2 reactive sputtering from Hf target followed by rapid thermal oxidation [42]. CVD deposition of this material has also been reported [53]. Kang et al [42] claimed that nitrogen incorporation at the gate dielectric/Si interface region and SiN formation may lead to the suppression of SiO formation in the reaction R3 mentioned above, resulting in the suppression of the leakage current increase.…”

Section: Hafnium-nitrogen-based Gate Dielectricsmentioning

confidence: 99%

“…Kang et al [42] claimed that nitrogen incorporation at the gate dielectric/Si interface region and SiN formation may lead to the suppression of SiO formation in the reaction R3 mentioned above, resulting in the suppression of the leakage current increase. The suppression of diffusion of oxygen [42,43] as well as impurities such as boron [48,53,54] through the film has also been reported to be a beneficial influence of the nitrogen incorporation.…”

Section: Hafnium-nitrogen-based Gate Dielectricsmentioning

confidence: 99%

Hafnium-Based Gate Dielectric Materials

Nishiyama

2013

High Permittivity Gate Dielectric Materials

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In this chapter, we focus on hafnium-based gate dielectrics. HfO 2 is regarded as the most promising material for the high-k gate dielectrics owing to its large dielectric constant and large band-gap energy. In the first part of this chapter, these characteristics are addressed in a comparison with SiO 2 and other high-k materials. Thermal stability is a major issue for the application of high-k materials to MOSFETs in LSIs. Although HfO 2 satisfies this requirement, severer process conditions may cause problems even with this material. Suppression of these issues is also addressed in the second part of this chapter. In order to enhance the characteristics of HfO 2 , transformation of the monoclinic phase to the tetragonal and the cubic phases with larger dielectric constant has been pursued recently. We mention the issue in the last part of this chapter. Introductory Remarks and Brief Outline of the ChapterSince the proposal of the materials in the early 2000s [1-3], hafnium-based gate dielectrics have been regarded as the most promising materials for the application to large scale integrations (LSIs). In 2007, Intel announced the start of manufacturing of 45 nm-node LSIs with high-k/metal gate stack, with the remark that the world's first high-k material in commercial production was hafnium-based [4].There are several characteristics that the high-k materials should meet for the application to metal oxide semiconductor field effect transistors (MOSFETs) in LSIs. First, we clarify the properties so that readers can understand their A. Nishiyama

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“…It causes equivalent oxide thickness (EOT) scaling and reliability concerns when Hf-based high-k ultrathin gate oxides are integrated into high temperature CMOS processes [26]. Recently, nitrogen incorporation has been extensively investigated in the field of high-k thin films [27,28]. Nitrogen introduction into HfO 2 films has significantly improved the electric properties as well as crystallinity [29,30].…”

Section: Doping Of Hf-based High-k Oxidesmentioning

confidence: 99%