Thermal transportation simulation of a susceptor structure with ring groove for the vertical MOCVD reactor

Li, Z.M.; Hao, Yue; Zhang, J.C.; Yang, Lin‐An; Xu, Shengrui; Chang, Yongming; Bi, Ziqiang; Zhou, Xuan; Ni, JinYu

doi:10.1016/j.jcrysgro.2009.09.025

Cited by 17 publications

(11 citation statements)

References 12 publications

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“…Thus, high safety procedures are mandatory to follow. Moreover, the higher complexity of MOCVD makes it more expensive than co-evaporation (Lia et al 2009). …”

Section: Thermoelectric Microconverters Fabrication Technology For MImentioning

confidence: 99%

Digitally-controlled array of solid-state microcoolers for use in surgery

et al. 2011

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This paper presents an approach for generating a well-defined cooling pattern over an area of tissue. An array of solid-state microcoolers is used, which could be included in a probe that provides local cooling. This medical instrument can be used for removal of scar tissue in the eye or for the rapid stopping of bleeding due to micro-cuts, which makes it a useful tool to medical doctors and could make surgery more secure to the patient. The array of microcoolers is composed of 64 independent thermo-electric elements, each controlled using an integrated circuit designed in CMOS. The independent control allows the flexible programming of the surface temperature profile. This type of control is very suitable in case abrupt temperature steps should be avoided. Cooling by lateral heat flow was selected in order to minimize the influence of heat by dissipation from the electronic circuits. Moreover, a thermo-electric component with lateral heat allows fabrication of the cooling elements using planar thin-film technology, lithography and wet etching on top of the silicon wafer. This approach is potentially CMOS compatible, which would allow for the fabrication of the thermo-electric elements on top of a pre-fabricated CMOS wafer as a post-process step. Each pixel is composed of thin-films of n-type bismuth telluride, Bi 2 Te 3 and p-type antimony telluride, Sb 2 Te 3 , which are electrically interconnected as thermocouple. These materials have excellent thermoelectric characteristics, such as thermoelectric figures-of-merit, ZT, at room temperatures of 0.84 and 0.5, respectively, which is equivalent to power-factors, PF, of 3.62 9 10 -3 W K -1 m -2 and 2.81 9 10 -3 W K -1 m -2 , respectively. The theoretical study presented here demonstrates a cooling capability of 15°C at room temperature (300 K & 27°C). This cooling performance is sufficient to maintain a local tissue temperature at 25°C, which makes it suitable for the intended application. A first prototype was successfully fabricated to demonstrate the concept.

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“…Thus, high safety procedures are mandatory to follow. Moreover, the higher complexity of MOCVD makes it more expensive than co-evaporation (Lia et al 2009). …”

Section: Thermoelectric Microconverters Fabrication Technology For MImentioning

confidence: 99%

Digitally-controlled array of solid-state microcoolers for use in surgery

et al. 2011

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“…The marked thirty-seven wafers are tiled on the graphite disk, and labeled from 1 to 37 as shown in figure 1d. These wafers are categorized into three groups: Zone A (1)- (7), Zone B (8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19), Zone C (20-37), also referred as the center zone, the middle zone and the outside zone, respectively. To simplify the modeling, the following hypotheses are made during the study.…”

Section: Geometry Descriptionmentioning

confidence: 99%

“…Zuo et al [11] developed a two-dimensional numerical model exploring transport phenomena in a radial-flow MOCVD reactor with three concentric vertical inlets. Li et al [12] proposed a novel susceptor structure with a ring groove to promote the uniformity of the wafer temperature distribution.…”

Section: Introductionmentioning

confidence: 99%

Uniformity analysis of temperature distribution in an industrial MOCVD reactor

Zheng

Fang

Zhang

et al. 2016

Crystal Research and Technology

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Three-dimensional models, coupling fluid flow and heat transfer, have been adopted to analyze influences of the process parameters on the temperature uniformity in an industrial MOCVD reactor. Important factors, such as the inlet gas flow, the susceptor rotation, the heater power, the distance between the heat shield and the susceptor (d 1 ), as well as the distance between the heater and the susceptor (d 2 ), have been investigated carefully. The system heating condition is characterized by temperature uniformity denoted as the standard deviation of temperature, and by thermal efficiency expressed as a combination parameter of the dissipated energy. The results reveal that decrease of the gas flow and the rotation rate, as well as increase of the distance d 1 , could monotonically enhance the temperature uniformity. The results also show that decrease of the above three parameters could improve the thermal efficiency. Furthermore, increase of the distance d 2 enhances the temperature uniformity, and reduces the thermal efficiency slightly. The influences of the parameters on the uniformity vary at the different locations of the susceptor as divided into Zone A, Zone B and Zone C. The conclusions help the growth engineer optimize the system design and process conditions of the reactor.

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“…Then, the joule heat is used as the thermal load, and the distributions of the temperature field in the reactor and susceptor are finally gained by analyzing the thermal conduction and radiation in the susceptor. The detailed mathematic model, the process of simulation and all parameters of materials are referred to [5,6]. The model includes the inner walls of the reactor, graphite susceptor, the up flange and the down flange which are axis-symmetric.…”

Section: Basic Principle and Structure Model Of Fem Analysis For Mocvmentioning

confidence: 99%

Finite element analysis and optimization of temperature field in GaN-MOCVD reactor

Zhang

Wang

et al. 2010

Sci. China Inf. Sci.

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The electromagnetic field distribution of the in-home GaN-MOCVD reactor heated by induction was simulated by using finite element method (FEM), and the distributions of the magnetic field and the joule heat in the graphite susceptor were obtained. Then the distribution of joule heat was used as the applied load for the simulation of temperature. Based on heat conduction and heat emission models, the temperature distribution in the reactor and the susceptor were gained. In order to improve the uniformity of the temperature on the top surface of the susceptor, the conventional concentric placement of the susceptor in the reactor was changed into the eccentric placement, which effectively improved the temperature uniformity and increased the heat efficiency. CitationZhang J C, Li Z M, Hao Y, et al. Finite element analysis and optimization of temperature field in GaN-MOCVD reactor.

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Thermal transportation simulation of a susceptor structure with ring groove for the vertical MOCVD reactor

Cited by 17 publications

References 12 publications

Digitally-controlled array of solid-state microcoolers for use in surgery

Digitally-controlled array of solid-state microcoolers for use in surgery

Uniformity analysis of temperature distribution in an industrial MOCVD reactor

Finite element analysis and optimization of temperature field in GaN-MOCVD reactor

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