Thermal switching of the scattering coefficients of terahertz surface plasmon polaritons impinging on a finite array of subwavelength grooves on semiconductor surfaces

Sánchez-Gil, JA José; Rivas, J Jaime Gómez

doi:10.1103/physrevb.73.205410

Cited by 72 publications

(35 citation statements)

References 29 publications

(32 reference statements)

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“…This assumption obviously is too simple to be correct at THz because the damping frequency is also a strong function of temperature [29]. Thus, in order to make a more realistic calculation, in this work, we shall adapt the experimental values for the temperature-dependent plasma frequency and the damping frequency, as listed in Table 1 [34]. With the inclusion of nonzero damping frequency, the calculated PBS is seen to be complex and is referred to as the so-called complex photonic band structure (CPBS).…”

Section: Basic Equationsmentioning

confidence: 99%

Complex Photonic Band Structures in a Photonic Crystal Containing Lossy Semiconductor Insb

Chang¹,

Wu²,

Wu³

2012

PIER

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Abstract-In this work, complex photonic band structure (CPBS) in a semiconductor-dielectric photonic crystal (SDPC) operating at terahertz frequencies is theoretically investigated. The SDPC is air/(S/D) N /air where the dielectric layer D is SiO 2 , the semiconductor layer S is an intrinsic semiconductor InSb, and N is the number of periods. Using the experimental data for the strongly temperaturedependent plasma frequency and damping frequency for InSb, we calculate the CPBS for the infinite SDPC at distinct operating temperatures. The CPBS is then compared with the calculated transmittance, reflectance, and absorptance as well in the finite SDPC. Based on the calculated CPBS, the role played by the loss factor (damping frequency), in InSb is revealed. Additionally, from the calculated transmittance spectra, we further investigate the cutoff frequency for the SDPC. The dependences of cutoff frequency on the number of periods and the filling factor of semiconductor layer are numerically illustrated.

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Section: Basic Equationsmentioning

confidence: 99%

Complex Photonic Band Structures in a Photonic Crystal Containing Lossy Semiconductor Insb

Chang¹,

Wu²,

Wu³

2012

PIER

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“…A very efficient scattering of SPPs with inhomogeneities in an otherwise flat semiconductor surface is thus expected. 23 For the measurements we used a THz time-domain spectrometer. 24 For the generation and detection of THz radiation we used the femtosecond ͑fs͒ pulses of a Ti:sapphire laser which were split into two beams.…”

Section: Samples and Setupmentioning

confidence: 99%

Analysis of the propagation of terahertz surface plasmon polaritons on semiconductor groove gratings

Kuttge

Kurz

Rivas

et al. 2007

Journal of Applied Physics

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We have investigated the propagation of terahertz ͑THz͒ surface plasmon polaritons ͑SPPs͒ on gratings formed by grooves structured in silicon wafers. These gratings exhibit a stop gap where SPPs are Bragg scattered. We observe a strong effect of the groove depth on the characteristics of the stop gap. To quantify the scattering strength of these structures we obtain the SPP attenuation length by measuring the transmission as a function of the number of grooves. We also determine the effective refractive index of the Bragg gratings using two different approaches: by measuring the transmittance through the gratings at different angles of incidence and from the phase of the transmitted THz pulses. The two approaches give results in good agreement.

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“…Doped semiconductors have a metallic behavior at THz frequencies, which enables the excitation of SPPs. The characteristics of SPPs can be tuned by controlling the carrier concentration in the semiconductor, which can be achieved by doping [5] or, actively, with magnetic fields [6,7], or by thermal- [8][9][10], photo-excitation [11][12][13][14][15] or electrical injection of charge carriers [16]. Complementary to hole arrays are arrays of metallic particles exhibiting very narrow bands with extraordinary extinction [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Semiconductor plasmonic crystals: Active control of THz extinction

Schaafsma

Rivas

2013

2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are characterized by a large extinction and narrow bandwidth, which can be tuned by controlling the charge carrier density in the semiconductor. The underlaying mechanism leading to this tuneability is explained using the coupled dipole approximation and considering GaAs as the semiconductor. The enhanced THz extinction in arrays of GaAs particles could be tuned in a wide range by optical pumping of charge carriers.

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Thermal switching of the scattering coefficients of terahertz surface plasmon polaritons impinging on a finite array of subwavelength grooves on semiconductor surfaces

Cited by 72 publications

References 29 publications

Complex Photonic Band Structures in a Photonic Crystal Containing Lossy Semiconductor Insb

Complex Photonic Band Structures in a Photonic Crystal Containing Lossy Semiconductor Insb

Analysis of the propagation of terahertz surface plasmon polaritons on semiconductor groove gratings

Semiconductor plasmonic crystals: Active control of THz extinction

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