Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (411)A-oriented substrates by MBE

Watanabe, Ichiro; Shinohara, Kazuhiko; Kitada, Takahiro; Shimomura, S.; Endoh, Akira; Yamashita, Yoshimi; Mimura, Takashi; Hiyamizu, S.; Matsui, Toshiaki

doi:10.1016/j.jcrysgro.2006.11.056

Cited by 9 publications

(4 citation statements)

References 13 publications

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“…Furthermore, the inserted Ti metals had good adhesion between the semiconductor and metal layers. 13 For comparison, a traditional device, denoted as device B, was fabricated by the same process, only without the NAOR technique. The schematic illustrations of the studied InAlAs/InGaAs MHEMTs with NAOR technique and traditional structure are depicted in Fig.…”

Section: Methodsmentioning

confidence: 99%

Effect of Nonannealed Ohmic-Recess Structure on Temperature-Dependent Characteristics of Metamorphic High-Electron-Mobility Transistors

Chen

Cheng

Chu

et al. 2008

J. Electrochem. Soc.

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The interesting temperature-dependent characteristics of an In 0.5 Al 0.5 As/In 0.5 Ga 0.5 As metamorphic high-electron-mobility transistor ͑MHEMT͒ using the nonannealed and ohmic-recess ͑NAOR͒ technique to reduce parasitic resistance are comprehensively studied and demonstrated. The proposed NAOR technique could reduce the parasitic resistance caused by large conduction-band discontinuity at InAlAs/InGaAs interface. Therefore, the improvement of device performance in terms of dc and parasitic resistance as well as radio frequency characteristics can be expected. In particular, as compared with the traditional MHEMT device, the higher gate/drain breakdown voltage of 22.93 ͑16.89͒ V, lower gate leakage current of 0.83 ͑259͒ A/mm at V GD = −14 V, higher drain saturation current of 327 ͑299͒ mA/mm, higher maximum transconductance of 302.4 ͑269.6͒ mS/mm, and lower parasitic resistance of 1.67 ͑2.02 ⍀ mm͒ are obtained, respectively, for the studied NAOR device at 300 ͑500͒ K. The corresponding unity current gain cutoff frequency f T ͑maximum oscillation frequency f max ͒ are 21.4 ͑65.5͒ and 19.3 ͑55.5͒ GHz at 250 and 400 K, respectively. Moreover, the relatively lower variations of device performance over a wide temperature range ͑300-500 K͒ are obtained.

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Section: Methodsmentioning

confidence: 99%

Effect of Nonannealed Ohmic-Recess Structure on Temperature-Dependent Characteristics of Metamorphic High-Electron-Mobility Transistors

Chen

Cheng

Chu

et al. 2008

J. Electrochem. Soc.

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“…The inserted titanium (Ti), used in both the gate metal and contacts metal structure, was served as a barrier to avoid the out-diffusion of gold (Au) [14]. Furthermore, the inserted Ti metals had a good adhesion between the semiconductor and metal layers [15]. The schematic cross section of the studied In 0.5 Ga 0.5 As/In 0.5 Al 0.5 As MHEMT is depicted in Fig.…”

Section: Methodsmentioning

confidence: 99%

Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts

Chen

Cheng

Huang

et al. 2010

Solid-State Electronics

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“…9) The gate-to-channel distance of 13 nm was also designed so as not to decrease the sheet electron concentration (N s ) in order to reduce the source and drain resistances and increase g m and f T . 10) Electron mobility () and N s were measured by Hall effects under a magnetic field of 0.32 T for the (411)A and (100) samples. The highly Si-doped InGaAs cap layers were etched using a highly selective adipic-acid-based etchant instead of the conventional citric-acid-based one.…”

Section: Epitaxial Growth and Device Fabricationmentioning

confidence: 99%

“…The InGaAs channel was selectively etched using the citric-acid-based etchant to form an air gap between the gate metal and the InGaAs channel at the mesa sidewall. The source and drain contacts were formed using nonalloyed Ti (10 nm)/Pt (10 nm)/Au (200 nm) ohmic contacts, which were thermally stable in the temperature range between 300 and 16 K. 10) The gap between the source and drain electrodes was 2 mm and the direction from the source to the drain was designed to be in the ½0 " 1 11 direction for both (411)A and (100) HEMTs. We evaporated a 20-nm-thick SiO 2 film to improve the resist adhesion, to define the gate footprint, and to mechanically support the T-shaped gate.…”

Section: Epitaxial Growth and Device Fabricationmentioning

confidence: 99%

Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor

Watanabe

Shinohara

Kitada

et al. 2007

jjap

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We achieved a current gain cutoff frequency ( f T ) of 310 GHz at a cryogenic temperature (16 K) in a 195-nm-long gate In 0:75 Ga 0:25 As/In 0:52 Al 0:48 As high-electron-mobility transistor (HEMT) fabricated on a (411)A-oriented InP substrate. This is 27% higher than that at room temperature (245 GHz). For a corresponding HEMT fabricated on a (100) InP substrate, f T of 268 GHz was also obtained at 16 K, which is 15% higher than that obtained at 300 K (233 GHz). For both (411)A and (100) HEMTs, this significant enhancement in low-temperature f T s was caused by the increased average electron velocity under the gate (v ave ), which was mainly due to the suppression of phonon scattering. Furthermore, f T as high as 310 GHz was attributed to v ave of up to 4:9 Â 10 7 cm/s at 16 K for the (411)A HEMTs. This is higher than that of the (100) HEMTs (4:5 Â 10 7 cm/s) and is due to the reduced interface roughness scattering of electrons caused by (411)A super-flat InGaAs/InAlAs interfaces (effectively atomically flat heterointerfaces over a wafer-size area).

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Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (411)A-oriented substrates by MBE

Cited by 9 publications

References 13 publications

Effect of Nonannealed Ohmic-Recess Structure on Temperature-Dependent Characteristics of Metamorphic High-Electron-Mobility Transistors

Effect of Nonannealed Ohmic-Recess Structure on Temperature-Dependent Characteristics of Metamorphic High-Electron-Mobility Transistors

Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts

Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor

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