Effect of Nonannealed Ohmic-Recess Structure on Temperature-Dependent Characteristics of Metamorphic High-Electron-Mobility Transistors

Chen, Li‐Yang; Cheng, Shiou–Ying; Chu, Kuei-Yi; Tsai, Tsung-Han; Chen, Tzu-Pin; Hung, Ching‐Wen; Liu, Wen‐Chau

doi:10.1149/1.2905813

Cited by 4 publications

(2 citation statements)

References 24 publications

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“…As mentioned above, the improved threshold voltage behavior of the Dmode device is caused by the better performance of metal-semiconductor interface. Furthermore, the considerably low temperature coefficients on threshold voltage measured is superior to the previous reports of the related GaAs-substrate transistors, 19,20 such as the InGaP/InGaAs/GaAs PHEMT with ∂V th /∂T of −1.33 mV K −119 and the InGaAs/InAlAs metamorphic HEMT with −1.21 mV K −1 . 20…”

Section: Gs 16contrasting

confidence: 59%

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Temperature-Dependent Study of AlGaAs/InGaAs Integrated Depletion/Enhancement-Mode High Electron Mobility Transistors with Virtual Channel Layers

Tsai

Lin

Liu

2020

ECS J. Solid State Sci. Technol.

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Recently, we have implemented the direct-coupled FET logic inverters by the AlGaAs/InGaAs co-integrated depletion-mode (D-mode) and enhancement-mode (E-mode) pseudomorphic high electron mobility transistors (PHEMTs) with virtual channel layers in this journal. In this article, the temperature-dependent characteristics of the above integrated PHEMTs will be demonstrated. Due to the two-dimensional electron gas (2DEG) located in the undoped In0.22Ga0.78As layer between two large energy-gap Al0.24Ga0.76As barrier layers, the integrated devices exhibit excellent thermal stability for the good confinement effect in the 2DEG channel. Experimental results exhibit that the maximum transconductance decreases from 162.2 (174.4) to 125.0 (105.8) mS mm−1 for the studied D-mode (E-mode) device as the temperature increases from 300 to 450 K. In addition, the maximum drain current reduces from 366.4 (379.6) at 300 K to 286.4 (254.6) mA mm−1 at 450 K. Significantly, a considerably low temperature coefficient on threshold voltage (∂Vth/∂T) of −0.266 (−0.866) mV K−1 for the D-mode (E-mode) PHEMT is measured, which is superior to the previous reports of the related GaAs-substrate transistors.

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Section: Gs 16contrasting

confidence: 59%

“…Furthermore, the considerably low temperature coefficients on threshold voltage measured is superior to the previous reports of the related GaAs-substrate transistors, 19,20 such as the InGaP/InGaAs/GaAs PHEMT with ∂V th /∂T of −1.33 mV K −119 and the InGaAs/InAlAs metamorphic HEMT with −1.21 mV K −1 . 20…”

Section: Gs 16contrasting

confidence: 59%

Temperature-Dependent Study of AlGaAs/InGaAs Integrated Depletion/Enhancement-Mode High Electron Mobility Transistors with Virtual Channel Layers

Tsai

Lin

Liu

2020

ECS J. Solid State Sci. Technol.

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Modulation‐Doped Field‐Effect Transistors (MODFET)

Zhu

Ferreyra

Morkoç̌

2015

Wiley Encyclopedia of Electrical and Electronics Engineering

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Conventional modulation‐doped field‐effect transistors (MODFETs) with unprecedented performance, e.g., a power gain of 15 dB at 190–235 GHz and a noise level of 1.2 dB with 7.2‐dB gain in the 90‐GHz range, have been demonstrated. Passivation process is of fundamental importance in the stability, good performance, and extension of device operative lifetime. We discuss strategies used to passivate the surface of GaAs and related compounds and GaN in the context of FETs. Recent research on the enhancement‐mode PMODFET (E‐PMODFET) variety for applications in high‐speed and low‐power digital circuits, and power amplifiers with single power supply is described. Reliability of MOSFET based on GaAs is reviewed to some extent. Scalability issues as well as progress in FinFET‐based on InGaAs channel are summarized. Also to be noted is that III–V compound semiconductors as alternative to Si as the channel material to improve the performance of metal‐oxide–semiconductor field‐effect transistors (MOSFETs) on Si platforms is a very attractive option for the next‐generation high‐speed integrated circuits but faces serious challenges because of the lack of a high‐quality and natural insulator. III‐V Nitride‐based HFETs showed tremendous performance in both high‐power RF and power‐switching applications. AlGaN/GaN based high power HFETs on SiC substrate with 60 nm gate lengths have achieved maximum oscillation frequency of 300 GHz. On‐resistance of 1.1∼1.2 Ω·mm as well as drain current of ∼0.9 A/mm was also achieved. For HFET devices operated in Class AB mode on GaN semi‐insulating substrates, a continuous wave power density of 9.4 W/mm was obtained with an associated gain of 11.6 dB and a power added efficiency of 40% at 10 GHz. III‐Nitride devices for power switching application has achieved near theoretical limit for vertical devices based GaN native substrates, and breakdown voltage as high as 1200 V and on resistance as low as 9 mΩ‐cm2 for lateral HFET devices on low‐cost silicon substrates. For AlGaN/GaN HFETs on high‐resistivity silicon substrates, promising results were also demonstrated. Because of the much larger 2DEG density in lattice‐matched InAlN/GaN HFETs, drain current as high as 2 A/mm was demonstrated, and the highest current gain cutoff frequency of 370 GHz was also reported on 7.5‐nm‐thick In In0.17Al0.83N barrier HFETs. Despite the above‐mentioned encouraging achievements, the degradation mechanisms are still not clear, which requires further investigation. The advent of high‐quality SiGe layers on Si substrates has paved the way for the exploration and exploitation of heterostructure devices in a Si environment. MODFETs based on the Si/SiGe have been achieved with extraordinary p ‐channel performance. With 0.25‐μm gate lengths, the current gain cutoff frequency is about 40 GHz. When the gate length was reduced to 0.1 μm, the current gain cutoff frequency increased to about 70 GHz.

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Thermal Stability of HfO2|AlGaN|GaN Normally-Off Transistors with Ni|Au and Pt Gate Metals

et al. 2021

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Effect of Nonannealed Ohmic-Recess Structure on Temperature-Dependent Characteristics of Metamorphic High-Electron-Mobility Transistors

Cited by 4 publications

References 24 publications

Temperature-Dependent Study of AlGaAs/InGaAs Integrated Depletion/Enhancement-Mode High Electron Mobility Transistors with Virtual Channel Layers

Temperature-Dependent Study of AlGaAs/InGaAs Integrated Depletion/Enhancement-Mode High Electron Mobility Transistors with Virtual Channel Layers

Modulation‐Doped Field‐Effect Transistors (MODFET)

Thermal Stability of HfO2|AlGaN|GaN Normally-Off Transistors with Ni|Au and Pt Gate Metals

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