No abstract

No abstract

No abstract

No abstract

The influences of the mesa-sidewall effect on dc and RF performances of Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As pseudomorphic high electron mobility transistors are studied and demonstrated. The leakage current path and parasitic capacitance induced from mesa-sidewalls seriously affect the device characteristics, including the excessive gate leakage current, the reduced breakdown voltage, the degraded RF current gain frequency and the increased sidegating effect.