Thermal stability of Ni monosilicide formed with Ti capping layer

Park, Soo‐Jin; Lee, Keun-Woo; You, Jung-Joo; Kim, Ju-Youn; Bae, Kyoo-Sik

doi:10.1109/edssc.2003.1283561

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668)

DOI: 10.1109/edssc.2003.1283561

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Thermal stability of Ni monosilicide formed with Ti capping layer

Soo‐Jin Park¹,

Keun-Woo Lee²,

Jung-Joo You³

et al.

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Cited by 2 publications

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Rapid thermal processing for silicon nanoelectronics applications

Fiory

2005

JOM

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Silicon Nanoelectronics OverviewSingle-wafer rapid thermal processing, which has become indispensable in the present-day manufacture of integrated circuits, has replaced batch furnace processing to satisfy device and production requirements for reduced thermal budget, process uniformity, high throughput, ease of process development, and low manufacturing cost. To meet the requirements for critical applications, rapid thermal annealing (RTA) techniques have been developed. For example, RTA is used to form ultrashallow junctions in complementarymetal-oxide semiconductor transistors with 10-nm-scale gate lengths. This paper discusses approaches to realize the needed rapidity and uniformity in RTA processes, some of which combine radiative, convective, and conductive heat transfer, to control the rapid thermal cycling of silicon wafers for various processes requiring peak temperatures in the range of 200°C to 1,350°C.

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Rapid thermal processing for silicon nanoelectronics applications

Fiory

2005

JOM

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Process and Characteristics of Fully Silicided Source/Drain (FSD) Thin-Film Transistors

Lin

Hsiao

Tsui

2006

IEEE Trans. Electron Devices

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Thermal stability of Ni monosilicide formed with Ti capping layer

Cited by 2 publications

References 5 publications

Rapid thermal processing for silicon nanoelectronics applications

Rapid thermal processing for silicon nanoelectronics applications

Process and Characteristics of Fully Silicided Source/Drain (FSD) Thin-Film Transistors

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