Thermal neutron irradiation effects on structural and electrical properties of n-type 4H‒SiC

Vali, Indudhar Panduranga; Shetty, Pramoda Kumara; Mahesha, M.G.; Rao, Mala N.; Kesari, Swayam

doi:10.1007/s10854-020-03385-9

Cited by 5 publications

(6 citation statements)

References 28 publications

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Section: Radiation Effect On Thin Films Transistor (Tft)mentioning

confidence: 99%

“…However, the quantum‐compatible state can be effectively switched with the alternation in V Si . [ 207 ] Raman spectroscopy of 4H‐SiC was studied before and after neutron irradiation in Figure 17i. After a neutron radiation fluence of ≈7.5 × 10 16 cm −2 , the phonon modes persist with no extra peaks.…”

Section: Radiation Effect On Thin Films Transistor (Tft)mentioning

confidence: 99%

“…The longitudinal optical phonon‐plasmon coupling (LOPC) displays a marginal shift toward lower frequency, suggesting a free carrier concentration decrease ( n e ). [ 207 ] Furthermore, the effect of neutron radiation on the electrical characterization of the 4H‐SiC‐based MOSFETs was investigated using Co‐60 gamma rays (see Figure 17j,k). The transfer curves of the 4H‐SiC MOSFET are presented in Figure 17j before and after irradiation with a dose of 300 krad.…”

Section: Radiation Effect On Thin Films Transistor (Tft)mentioning

confidence: 99%

mentioning

confidence: 99%

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Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Muhammad

Wang

Zhang

et al. 2022

Adv Materials Technologies

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These energetic particles, such as electrons, protons, neutrons, X-rays, or gamma rays, induced damage in materials (used in electronic devices) through total ionization and displacement, [4] which would affect the reliability of the electronic devices. [5][6][7] Electronics failure occurs in harsh and inaccessible environments through various paths, such as electromagnetic waves, nuclear reactions, and high-frequency communications systems. Therefore, the radiationhardened requirements of the deployed electronic technology depend on the specific high-energy photons and particles in the radiation environment. For example, Mars exploration requires a special proton anti-radiation in electronics. At the same time, the safety supervision and inspection of the contaminated nuclear area are suggested to be equipped with high resilience towards the alpha, beta, and gamma rays. The development of radiation-hard electric circuits over the years has led researchers to consider the application of functional anti-irradiation material to devices. The current focus is on developing complementary metal-oxide semiconductors (CMOS) with wide bandgap semiconductors (WBGs), which are well suited to large-area aerospace applications. [8][9][10] As shown in Figure 1, a notable material class of WBGs can be listed as metal oxides (MOS), transition-metal dichalcogenides (TMDs), silicon carbide, gallium nitride, and others. WBGs materials contribute robust properties under harsh conditions due to their strong electronic compliance, high-temperature competence, and strong atomic bond energy. [11][12][13][14][15][16] They have been proposed as favorable materials for aerospace and other radiation-hardened applications. Generally, the bandgap in the semiconductor reflects the extra energy that a valence electron must access to become a free electron. Its large bandgap of more than 3 eV guarantees inherent reliability in the semiconductors, providing transparency for the low-energy photons. The large, spherical nsorbitals in the conduction band (CB) of MOS also play a critical role in high dopability for hosting a high density of electrons, leading to the remarkably tolerance to various radiation fluences. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] Understanding the apparent immunity of the WBGs to various radiation environments and radiation-hard electronic engineering would be critical for pushing the technology further and understanding its limitations. Efforts to address these issues have been underway over the past two decades. Substantial progress has also been made in designing radiation-hard thin films transistors (TFTs) with ZnO, Ga 2 O 3 , In 2 O 3 , SnO 2 , IGZO, SiC, GaN, and many other WBGs, The aspiration of electronic technologies that are resistant to high-energy cosmic radiation is essential for current harsh radiation environment exploration. Integrated circuits mostly require post-processing after designing, making their structures more complex than the standard systems. Thus, unique de...

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Section: Radiation Effect On Thin Films Transistor (Tft)mentioning

confidence: 99%

Section: Radiation Effect On Thin Films Transistor (Tft)mentioning

confidence: 99%

Section: Radiation Effect On Thin Films Transistor (Tft)mentioning

confidence: 99%

mentioning

confidence: 99%

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Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Muhammad

Wang

Zhang

et al. 2022

Adv Materials Technologies

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“…In 2020, a review on SiC detector development was presented [ 11 ]. In the same year, a study of the thermal neutron irradiation influence on the structural and electrical properties of n-4H-SiC and n-Al/n-4H-SiC Schottky contacts was reported [ 12 ]. This study indicated that neutron irradiation would affect the electrical properties of the 4H-SiC detector, especially for n-Al/n-4H-SiC Schottky contacts.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4

Zhang

Aspinall

2021

Sensors

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Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga2O3) and gallium nitride (GaN), and the converter layer materials are boron carbide (B4C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research.

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