Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4

Abstract

Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga2O3) and gallium nitride (GaN), and the converter layer materials are boron carbide (B4C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research.

Simulation of the charge collection characteristics of the 4H-SiC PIN fast neutron detector with TCAD

“…Wide band SiC radiation detectors have potential applications in extreme radiation environments such as neutron energy spectrum monitoring in reactor radiation fields and space exploration. [7][8][9] Many studies have simulated 4H-SiC fast neutron detectors using Geant4 software and TCAD software, [10][11][12][13] but few have coupled Geant4 software and TCAD software to perform simulations. Therefore, this paper coupled Geant4 and TCAD software to simulate the 4H-SiC PIN fast neutron detector to provide an important parameter basis for the optimal configuration of detector conditions and its readout electronics design.…”

Preparation of Novel Heterodimensional Structured Chalcogenide Semiconductor Nano‐Film by Pulsed Laser Deposition Technology

“…It has excellent thermal and chemical stability and application prospects in high-power, high-voltage, and high-current density equipment. [12,13] In addition, Ga 2 O 3 materials also have exceptional conductive and luminescent properties. [14] The introduction of Ga 2 O 3 can solve the problem of poor electrical properties of ZnSe materials and expand the photoluminescence spectrum range of thin film materials.…”