Thermal modification of wide-bandgap hydrogenated amorphous silicon-carbon alloy films grown by plasma-enhanced chemical vapour deposition from C2H2+SiH4 mixtures

Ivashchenko, V. I. Ivashchenko, V. M. Popov, and S. M. Dub UDC 621.762 The effects of major technological parameters in plasmochemical deposition have been examined as regards the properties of thin-film coatings based on amorphous hydrogenated silicon carbide (a-SiC : H) formed by the use of methyltrichlorosilane. Effects have been established from the substrate temperature, discharge power, and pressure of the reagent gases in the reaction chamber on the plasma performance. The films have been examined by secondary mass spectroscopy, and by infrared and optical spectroscopy, as well as by hardness testing by nanoindentation. Films based on amorphous hydrogenated silicon carbide can be used as wear-resistant coatings for metal-cutting tools and as active layers in semiconductor devices.

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a-SiC:H films as perspective wear-resistant coatings

Porada

Иващенко

Ivashchenko

et al. 2004

Surface and Coatings Technology

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Thermal modification of wide-bandgap hydrogenated amorphous silicon-carbon alloy films grown by plasma-enhanced chemical vapour deposition from C₂H₂+SiH₄ mixtures

Cited by 6 publications

References 27 publications

Hydrogenated Amorphous Silicon Carbide Films as Perspective Tribological Coatings and Semiconductor Layers

Hydrogenated Amorphous Silicon Carbide Films as Perspective Tribological Coatings and Semiconductor Layers

Characteristics and Plasmochemical Deposition of Coatings Based on Amorphous Hydrogenated Silicon Carbide

a-SiC:H films as perspective wear-resistant coatings

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