a-SiC:H films as perspective wear-resistant coatings

Porada, O. K.; Иващенко, В. И.; Ivashchenko, L. A.; Rusakov, G. V.; Дуб, С. Н.; Stegnij, A.I.

doi:10.1016/j.surfcoat.2003.10.140

Cited by 29 publications

(19 citation statements)

References 21 publications

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“…By comparison, it has been reported that the hardness of a-SiC films deposited by PECVD at 175 °C using silacyclobutane (SiC 3 H 8 ) was ~17.5 GPa [120]. In contrast, films deposited at the same temperature using SiH 4 and methane (CH 4 ) as precursors had hardness values of 10 GPa, which could be increased by up to 25% by annealing [121].…”

Section: Feature Articlementioning

confidence: 99%

“…Previously reported work in PECVD of a-SiC:H has focused on synthesis using the following precursors: SiH 4 and CH 4 [125,129,[139][140][141][142], SiH 4 and ethylene (C 2 H 4 ) [116], methylsilane ((CH 3 )SiH) [120], trimethylsilane ((CH 3 ) 3 SiH) [128,143], methyltrichorosilane (CH 3 SiCl 3 , MTS) [121,144], hexamethyldisilane (C 6 H 18 Si 12 , HMDS) [117,138,145], and silacyclobutane (SiC 3 H 8 , SCB) [120,142]. CVD-based deposition processes that have been used to deposit a-SiC films include high-density plasma CVD (HDPCVD) [126], electron cyclotron resonance CVD (ECRCVD) [146] …”

Section: Materials Preparationmentioning

confidence: 99%

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Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Zorman

Parro

2008

Physica Status Solidi (b)

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Silicon carbide (SiC) is recognized as the leading semiconductor for high power and high temperature electronics owing to its outstanding electrical properties combined with mature processing technologies for monolithic structures. SiC has long been known for its outstanding mechanical and chemical properties making it equally attractive for mechanical structures in micro‐ and nanoelectromechanical systems (MEMS and NEMS). Recent advancements in bulk and surface micromachining have led to the development of SiC analogues to common Si‐based devices (i.e., resonators, pressure sensors). This paper presents an overview of MEMS and NEMS technologies that incorporate SiC as a key component in their mechanical structure, providing both a historical perspective as well as recent developments. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Feature Articlementioning

confidence: 99%

Section: Materials Preparationmentioning

confidence: 99%

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Zorman

Parro

2008

Physica Status Solidi (b)

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“…An important contribution to the developing technology of preparing Si x C y :H coatings by PACVD from MTCS diluted in hydrogen was made by a group of Ukrainian researchers [4][5][6][7][8]. They used a non-standard plasmochemical installation with a high frequency (40.7 MHz) plasma generator.…”

Section: Introductionmentioning

confidence: 99%

“…They used a non-standard plasmochemical installation with a high frequency (40.7 MHz) plasma generator. Their studies concentrated on the major technological parameters and their effects on microstructure [4][5][6] and chemical composition [5] and hence on the electronic [4,5], tribological [7,8] and mechanical [6] properties of the deposit. Among other things, it was established that the ratio of the MTCS and H 2 concentrations strongly affected the film structures [4].…”

Section: Introductionmentioning

confidence: 99%

An Analysis of Low Frequency Discharge in a CH3SiCl3-Ar-H2 Mixture by Optical Emission Spectroscopy and Actinometry

Kułakowska-Pawlak

Jamróz

2010

Plasma Chem Plasma Process

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Low frequency (100 kHz) discharge in Ar-H 2 and CH 3 SiCl 3 -Ar-H 2 mixtures was studied to obtain information on the processes involved in plasma deposition of Si x C y :H films from CH 3 SiCl 3 -Ar-H 2 plasma once the properties of Ar-H 2 plasma are known. The plasmas were studied using optical emission spectroscopy. The addition of small amounts of nitrogen to the plasma mixtures also permitted the use of an actinometry technique. First, plasma parameters (electron density and temperature) and actinometric concentrations of atomic hydrogen in an argon-hydrogen plasma were investigated as a function of the hydrogen content in the feed. Second, the emission intensities of Si, Si ? , CH, H, Ar and Ar ? species produced in the CH 3 SiCl 3 -Ar-H 2 discharge were analysed as a function of time following the introduction of CH 3 SiCl 3 (methyltrichlorosilane, MTCS) to the argon-hydrogen plasmas with various proportions of the feed gasses. The results reveal a rapid decay of the Si-excited state number density versus time, while those of Si ? and CH fell off more slowly. The emission of atomic silicon was believed to be a result of electron impact dissociative and excitation processes occurring in the bulk of the discharge, whereas the Si ? and CH seemed to originate mainly from products of sputtering of the growing film surface. The fragmentation of the MTCS associated with HCl formation and enhanced atomic hydrogen production as a result of HCl dissociation are proposed. Variations in the radical densities of H and CH 3 were determined using an actinometry technique. The results indicate a significant role for H 2 in gas-phase reactions occurring in the CH 3 SiCl 3 -Ar-H 2 plasma, as well as in gas-surface interactions, leading to competition between deposition and chemical sputtering of already deposited material.

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“…[1][2][3][4][5] It has become important to understand the friction and wear properties of such coatings. Coating surfaces are usually rough, and friction is generated between contacting asperities on the surfaces.…”

mentioning

confidence: 99%

Tribology of amorphous, nanocrystalline, and crystalline slabs of Si, C, and SiC

et al. 2005

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Atomistic molecular dynamics simulations are applied to the study of sliding friction of a-SiC / a-SiC, a-SiC / c-C, nc-SiC / c-C, and c-Si/ c-C systems. The friction coefficient and the structural evolution of the systems are investigated as functions of sliding velocity, temperature, and normal load. Based on the simulation results, the physics of atomic-scale sliding friction in the semiconductors under investigation is clarified, and the properties are validated with available experimental results.Recent advances in the deposition of carbon and silicon carbide films hold promise for producing hard protective and wear resistant coatings on a variety of substrates. 1-5 It has become important to understand the friction and wear properties of such coatings. Coating surfaces are usually rough, and friction is generated between contacting asperities on the surfaces. The contact area is defined beyond the atomic scale, and various friction models provide insight into the behavior within these contacts. 6,7 While a few theoretical investigations of the tribological properties of diamond exist, 6,8-11 analogous comprehensive studies on silicon-based materials are yet lacking. In addition, the theoretical science of atomic-scale sliding friction between amorphous and crystalline, amorphous and amorphous, nanocrystalline and crystalline materials is still in its infant stage. At the same time, there is a growing interest in the application of molecular dynamics ͑MD͒ simulations to the tribology of metallic systems. Such phenomena as static friction, indentation and cutting, lubrication have been studied. Moreover, MD simulations have been used to investigate microstructural evolution at a sliding metallic interface. ͑Reviews on the theoretical investigations of sliding friction in metallic and diamond systems can be found in Refs. 6,7,and 12.͒ In this paper, we have carried out a series of atomistic MD simulations to gain insight into the physics of sliding friction of silicon-carbon alloys. We have considered the sliding of amorphous, nanostructured, and crystalline heterocouples under different sliding conditions. The pairs of different materials were chosen to simulate the sliding process that most often occurs in tribological experiments, for example, in ball-on-plane and polishing tests. 2-5 Sliding friction was investigated as function of sliding velocity ͑V͒, temperature ͑T͒, and normal load ͑F N ͒.The sliding systems, analyzed in the present paper, are represented by two sliding blocks ͑slabs͒. The lower slab is associated with diamond or a-SiC, while the upper one is made of a-SiC, nc-SiC or c-Si. Experimentally, heat diffuses away from the sliding interface. To simulate this effect, two reservoir regions are located at the outer surface of the upper and lower sliding slabs. During the simulation the reservoirs are thermostated to maintain a constant low temperature. In the reservoirs, external normal ͑F N ͒ and tangential forces are applied to each atom. The normal force is constant, and the uniform tangentia...

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a-SiC:H films as perspective wear-resistant coatings

Cited by 29 publications

References 21 publications

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

An Analysis of Low Frequency Discharge in a CH3SiCl3-Ar-H2 Mixture by Optical Emission Spectroscopy and Actinometry

Tribology of amorphous, nanocrystalline, and crystalline slabs of Si, C, and SiC

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