Thermal Migration of Melted Zones over the Silicon Surface under Thermal Shock

Features of Melt Droplet Formation during Electrical Destruction Aluminum Films on the Semiconductor Surface

“…Temperature modes were considered inclusive to critical operating modes. It has been found that the liquid Al phase is formed in connection with the formation it's melting region and at the interfacial boundary of Al-Si, which is consistent with the previously obtained results [12,16]. It was found that at current densities j< jkr (j= 7•10 10 A/m 2 and pulse duration 500 μs) there is an explosion (thin metal film on the semiconductor surface) and the formation of local drops.…”

“…5, b) and to turn in drops the conducting line and thermal allocation stops. [16]. The mechanism for forming such molten regions in the metal track has been discussed previously [17,18] and has been associated with mass transfer processes Al at defective metal film sites, resulting in a local reduction in cross section, an increase in current density, and the appearance of molten portions [16].…”

Analysis of the process of aluminium destruction on the surface of silicon during the electrical explosion of the conductor

“…Experimental studies were carried out according to the method [9,10] on a setup comprising a pulse generator based on high-capacity capacitors C = 4000 µF (maximum amplitude of the square current pulse and pulse duration did not exceed I max = 150 A and τ max = 2 ms respectively with the sample resistance not more than R max = 1 , the steepness of the leading and trailing edges was 7 and 10 µs respectively), a digital storage oscillograph and optical microscope to record the " thermal" fracture processes of metallization systems [11].…”

“…Phosphorus-doped silicon wafers with a thickness of 400 µm, oriented in the direction of (111), with resistivity of 25 • cm were used as substrates. The technique for preparing the structures is described in detail in [9,10].…”

“…Temperature changes in the thin-film structure were recorded according to the technique [9,10]. Square current pulses were passed through a metallization track with oscillographic recording of voltage drop U(t) from the test structure section.…”