Thermal Crosslinking By Unexposed Naphthoquinone Diazides As Diffusion Inhibition Mechanism In The DESIRE Process

Roland, Bruno; Vandendriessche, J.; Lombaerts, R.; Denturck, B.; Jakus, C.

doi:10.1117/12.968309

Cited by 14 publications

(4 citation statements)

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“…These silylation rate models are applied to resists containing two compounds after exposure. Under the e-beam exposure, crosslinking occurs between different novolak chains producing an ester [8,9] while the NUV exposure produces ICA. Presently, no silylation rate models have been developed for resists containing three compounds after exposure as in the PRIME process.…”

Section: Resist Silylation Modelmentioning

confidence: 99%

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<title>Modeling and simulation of the PRIME process using the SLITS simulator</title>

McDonagh

Arshak

et al. 1995

SPIE Proceedings

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In this paper, a new method to calculate the silylation profile in the PRIME process is presented. New software modules have been added to the 2D simulator SLITS in order to simulate the silylation and dry developed profiles in the PRIME process. The silylation and dry developed profiles for the PRIME process are simulated and compared to experimental results. Simulations were carried out for both e-beam and DUV exposures. Under e-beam exposure, the maximum percentage error between the simulated and experimental results was 13%. Under DIN exposure, the silylation depth at the mask edge can be reduced by increasing the dose thus effectively controlling the resist linewidth. The depth of focus was found to be O.4jtm. In order to model the DUV/NUV exposure of the resist, the 2D simulator SLiTS is used to obtain the aerial and latent images. The aerial image is solved using Hopkin's Theory of partial coherence imaging [12]. The latent image formation is modelled by solving the Helmholtz equation on a two-dimensional domain using the finite element method O-8194-1786-G/95/$6.OO SPIE Vol. 2438 / 817 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/28/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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Section: Resist Silylation Modelmentioning

confidence: 99%

“…In this paper the modelling and simulation of the PRIME process is considered. This method accounts for the crosslinking of the novolak chains during the e-beamfDUV exposure [8,9]. The DIN imagewise exposure and NUV flood exposure are calculated using the 2D simulator SLITS (Simulation of Lithography on Topographic Substrates) [7].…”

Section: Introductionmentioning

confidence: 99%

<title>Modeling and simulation of the PRIME process using the SLITS simulator</title>

McDonagh

Arshak

et al. 1995

SPIE Proceedings

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“…6 During silylation, the siIylating agent diffuses into the exposed areas and reacts with the hydroxyl groups of the novolac resin, In unexposed areas on the other hand, no silicon will be incorporated. Scheme 1 shows the reactions during the various processing steps for non-DUV exposures.…”

Section: Reaction Mechanismsmentioning

confidence: 99%

Silylation of novolac based resists: Influence of deep-ultraviolet induced crosslinking

Beeck¹

1992

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Most surface imaging resist schemes are based on the selective diffusion of a Si-containing compound into the resist. In the diffusion enhanced silylated resist process hexamethyldisilazane is being incorporated in the exposed regions during the silylation treatment. Upon deep ultraviolet irradiation (at 248 nm), novolac based resists will however crosslink to some extent. The crosslinking reaction influences the degree of silicon incorporation in the exposed resist and hence plays an important role in the imaging properties. The crosslinking reaction has been studied in detail in this work for two types of Plasmask deep-ultraviolet resists, along with its consequences on resist imaging. A decrease in silicon incorporation due to crosslinking puts a serious limitation on the useful process window for Plasmask 150u, but the process window is not limited by crosslinking for Plasmask 301 u. A thorough investigation of the influence of crosslinking on the pattern deformation is also carried out.

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“…For instance, the limitations of resolution in the DESIRE process [5], the methods of optimizing DESIRE process [6], mechanism of the DESIRE process [7,8], applications of mass production of ULSI[9, 1O,11], and only a few papers report the silylation kinetics [12,13]. For instance, the limitations of resolution in the DESIRE process [5], the methods of optimizing DESIRE process [6], mechanism of the DESIRE process [7,8], applications of mass production of ULSI[9, 1O,11], and only a few papers report the silylation kinetics [12,13].…”

Section: Introductionmentioning

confidence: 99%

<title>Effect of silylation condition on the silylated image in the DESIRE process</title>

Taira

Takahashi

Yanagihara

1991

Advances in Resist Technology and Processing VIII

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In recent years, there have been a lot of studies on surface imaging techniques in which the single layer lithography process is utilized. They have advantages of capability of high resolution, wide focus latitude, small critical dimension(CD) variation on topography, as well as their process simplicity compared with multilayer lithography process.The DESIRE[1,2] process, one of the surface imaging process, also has the same advantages.

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Thermal Crosslinking By Unexposed Naphthoquinone Diazides As Diffusion Inhibition Mechanism In The DESIRE Process

Cited by 14 publications

References 0 publications

<title>Modeling and simulation of the PRIME process using the SLITS simulator</title>

<title>Modeling and simulation of the PRIME process using the SLITS simulator</title>

Silylation of novolac based resists: Influence of deep-ultraviolet induced crosslinking

<title>Effect of silylation condition on the silylated image in the DESIRE process</title>

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