We introduce the DESIRE system, a noval approach to dry developed resist systems. DESIRE is a single layer system based on selective silylation.The optical spatial information is translated into silicon being built into the resin during the silylation treatment.A negative working version will be discussed.The process flow is given and a set of results showing submicron dimensions with high aspect ratio and good linewidth control are presented.The excellent features of the system make it a possible candidate for use in submicron applications with UV exposure tools.
We report on the impact of the use of the DESIRE system in optical lithography. Results obtained with first and second generation resists are compared with the performance of the DESIRE system. This comparative study was done for scanning projection, lx stepper and reduction stepper equipment.The in-process compatibility of the new dry developed resist system is described.Thermal stability up to 300 °C and good resistance to dry etching are reported.Also the impact of the addition of a color dye to the DESIRE -resin on the linewidth control is demonstrated.
We report on the properties of semipolar (Zn,Mg)O/ZnO quantum wells homoepitaxially grown by molecular beam epitaxy on (101¯2) R-plane ZnO substrates. We demonstrate that atomically flat interfaces can be achieved with fully relaxed quantum wells because the mismatch between (Zn,Mg)O and ZnO is minimal for this growth orientation. The photoluminescence properties evidence a quantum confined Stark effect with an internal electric field estimated to 430 kV/cm for a 17% Mg content in the barriers. The quantum well emission is strongly polarized along the [1¯21¯0] direction and a comparison with the semipolar bulk ZnO luminescence polarization points to the effect of the confinement.
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