Enhanced Performance Of Optical Lithography Using The DESIRE System

Coopmans, F.; Roland, Bruno

doi:10.1117/12.963730

Cited by 12 publications

(10 citation statements)

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“…32). [147] have used similar functionalization reactions to achieve even more impressive results at conventional UV wavelengths. Consequently, selectivity was high (-20) during 0 2 RIE development and sub μνα patterns were obtained.…”

Section: A P a P A A A A A P A P A A A A A A P P A Amentioning

confidence: 99%

Plasma Etching of Organic Polymers

Egitto

1990

Plasma Deposition, Treatment, and Etching of Polymers

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Section: A P a P A A A A A P A P A A A A A A P P A Amentioning

confidence: 99%

Plasma Etching of Organic Polymers

Egitto

1990

Plasma Deposition, Treatment, and Etching of Polymers

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“…cation-radicals, biradicals etc.. The life time of monofunctional particles is limited by the chain termination reactions (2). At the same time, the considerable value of the polymer deposition rate is provided by the repeating activation of elementary reactions products.…”

Section: Plasma Polymerization Mechanismmentioning

confidence: 99%

Vacuum-plasma deposition of resist film on substrate by means of copolymerization of monomers in the afterglow zone of rf discharge

Simakov¹,

Fyodorov²,

Savinskiy³

1992

SPIE Proceedings

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The plasma polymerization is one of the methods of resist film coating. It is known that polymer depositon rate has maximum value in the glow zone of discharge (GZD). But the activation of monomer molecules in GZD may lead to their considerable destruction. To keep the initial molecular structure of at least one of monomers the following experiment on copolymerization of two monomers was carried out. Inside the flowing tube reactor the vapour of one monomer, for example, xylene, was filled in the glow zone of argon plasma, and the vapour of another monomer, (methyl methacrylate) was filled outside this zone, in the lower part of the gas flow. The silicon substrate was placed perpendicularly to the reactor axis under GZD. The thickness of polymer film was controled by means of laser interferometer.The experiment revealed that the film deposition rate is significantly greater for copolymerization of two monomers than for polymerization of each of monomers separatly when another one is not filled. Thus the principal possibility of copolymerization of monomers in the after glow zone of discharge (AGZD) has been demonstrated, moreover only one monomer is activated in the plasma during this process, while the structure of another one is preserved.

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“…Surface-imaged processes are generally based upon area-selective silylation of novolac-or phenol-based resins [19]. At 193 nm, the selective silylation process requires the resist exposure to crosslink the resin, either directly [20] or through a subsequent acid-catalyzed reaction activated during a post-exposure bake step [21].…”

Section: Surface-imaged Resist Processesmentioning

confidence: 99%

Resist processes for ArF excimer laser lithography.

Kunz

Hartney

Horn

et al. 1993

J. Photopol. Sci. Technol.

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A review of recent efforts to develop photoresist materials and processes for 193-nm (ArF excimer laser) photolithography is reported. Three categories of resist processes are discussed: (1) single-layer resists based on acrylate polymers, (2) silicon-polymer bilayer resists, and (3) surface-imaged positive-tone silylation resist processes. To date, materials have been developed for each process which exhibit resolution to better than 0.20 µm with sensitivities less than 50 mJ/cm2.

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Enhanced Performance Of Optical Lithography Using The DESIRE System

Cited by 12 publications

References 0 publications

Plasma Etching of Organic Polymers

Plasma Etching of Organic Polymers

Vacuum-plasma deposition of resist film on substrate by means of copolymerization of monomers in the afterglow zone of rf discharge

Resist processes for ArF excimer laser lithography.

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