<title>Modeling and simulation of the PRIME process using the SLITS simulator</title>

Abstract

In this paper, a new method to calculate the silylation profile in the PRIME process is presented. New software modules have been added to the 2D simulator SLITS in order to simulate the silylation and dry developed profiles in the PRIME process. The silylation and dry developed profiles for the PRIME process are simulated and compared to experimental results. Simulations were carried out for both e-beam and DUV exposures. Under e-beam exposure, the maximum percentage error between the simulated and experimental results was 13%. Under DIN exposure, the silylation depth at the mask edge can be reduced by increasing the dose thus effectively controlling the resist linewidth. The depth of focus was found to be O.4jtm. In order to model the DUV/NUV exposure of the resist, the 2D simulator SLiTS is used to obtain the aerial and latent images. The aerial image is solved using Hopkin's Theory of partial coherence imaging [12]. The latent image formation is modelled by solving the Helmholtz equation on a two-dimensional domain using the finite element method O-8194-1786-G/95/$6.OO SPIE Vol. 2438 / 817 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/28/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx