Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors

Piprek, Joachim; Troger, T.; Schröter, Bernd; Kolodzey, J.; Ih, Charles S.

doi:10.1109/68.651113

Cited by 67 publications

(25 citation statements)

References 9 publications

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“…Согласно [95], теплопроводность РБО анизотропна, причем продольная компонента (в плоскости эпитаксиальных слоев) типично вдвое больше поперечной компоненты, а наличие градиентных интерфейсов в РБО ведет к дополнительному падению их теплопро-водности в продольном направлении. Повышение теплопроводности РБО Al(Ga)As возможно лишь при использовании четвертьволновых слоев на основе бинарных соединений мышьяка, обладающих макси-мальными коэффициентами теплопроводности.…”

Section: тепловые эффектыunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called “vertical-cavity surface-emitting lasers”) under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ∼30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

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Section: тепловые эффектыunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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“…Depending on boundary roughness, phonon may exhibit the mirror (specular) reflection or the diffuse reflection, when it is scattered in all directions [22]. That is why in multi-layered structures, thermal conductivity in the direction perpendicular to layer boundaries is considerably reduced compared to the weighted average of bulk values of constituent layers [23][24][25]. Besides, a distinct anisotropy in the thermal conductivity is observed.…”

Section: Thermal Vcsel Modelsmentioning

confidence: 99%

Principles of VCSEL designing

Nakwaski

2008

Opto-Electronics Review

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Comprehensive computer simulations are currently the most efficient and cheap methods in designing and optimisation of semiconductor device structures. Seemingly they should be as exact as possible, but in practice it is well known that the most exact approaches are also the most involved and the most time-consuming ones and need powerful computers. In some cases, cheaper somewhat simplified modelling simulations are sufficiently accurate. Therefore, an appropriate modelling approach should be chosen taking into account a compromise between our needs and our possibilities.Modelling of operation and designing of structures of vertical-cavity surface-emitting diode lasers (VCSELs) requires appropriate mathematical description of physical processes crucial for devices operation, i.e., various optical, electrical, thermal, recombination and sometimes also mechanical phenomena taking place within their volumes. Equally important are mutual interactions between above individual processes, usually strongly non-linear and creating a real network of various inter-relations.Chain is as strong as its weakest link. Analogously, model is as exact as its less exact part. Therefore it is useless to improve exactness of its more accurate parts and not to care about less exact ones. All model parts should exhibit similar accuracy. In any individual case, a reasonable compromise should be reached between high modelling fidelity and its practical convenience depending on a main modelling goal, importance and urgency of expected results, available equipment and also financial possibilities. In the present paper, some simplifications used in VCSEL modelling are discussed and their impact on exactness of VCSEL designing is analysed.

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“…Self-heating changes electrical and optical material properties and it may affect the device performance. The thermal conductivity values used in our thermal simulation consider the strong effect of alloy scattering in AlGaAs [7] as well as interface scattering in thin layers [8] (Table I). Outside the simulated device region, a lumped external thermal resistance of 50 K/W is employed to represent the GaAs substrate and the heat sink.…”

Section: Self-heatingmentioning

confidence: 99%

Optimization of GaAs amplification photodetectors for 700% quantum efficiency

Piprek

Lasaosa

Pasquariello

et al. 2003

IEEE J. Select. Topics Quantum Electron.

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Abstract-We investigate the device physics of novel GaAs waveguide photodetectors with integrated photon multiplication. Such detectors have the potential to achieve simultaneously high saturation power, high speed, high responsivity, and quantum efficiencies above 100%. Our device design vertically combines a bulk photodetector ridge waveguide region with laterally confined quantum wells for amplification. Measurements on the first device generation show quantum efficiencies of only 56%. Advanced device simulation is employed to analyze these devices and to reveal performance limitations. Excellent agreement between simulations and measurements is obtained. Device design optimization is proposed, promising more than 700% efficiency.

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Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors

Cited by 67 publications

References 9 publications

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Principles of VCSEL designing

Optimization of GaAs amplification photodetectors for 700% quantum efficiency

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