The effect of Ge-composition on the transit-time limited frequency response of a vertical Si/ Si 1−y Ge y P-i-N photodetector has been investigated. The change in Ge-content ͑y͒ causes the changes in properties of the SiGe layer and the Si/ SiGe interfaces and, hence, affects the transit time of carriers in the Si/ SiGe photodetector. The results obtained from the analysis show that at low bias, the bandwidth of the photodetector initially increases with increase in Ge-content, but after an optimum value of Ge-content, the bandwidth starts decreasing. This optimum value increases with increase in applied bias.