Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser

Abstract

A multiple quantum well (MQW) transistor vertical-cavity surfaceemitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps.

Room‐temperature operation of transistor vertical‐cavity surface‐emitting laser

“…Similar to the current‐controlled operation, a pronounced lasing threshold is observed and P out is limited by self‐heating and thermal roll‐over at high voltages. This voltage‐controlled operation is unique to transistor lasers and may find important applications [6].…”

“…To reach such high and even higher modulation rates over an extended temperature range and with sufficient output power, radically new design concepts are required. Transistor-VCSELs (T-VCSELs) and their potential for high-speed modulation were evaluated numerically by Shi et al [6], and very recently the first experimental demonstration of a T-VCSEL at low temperature was reported [7], including the voltage controlled operation of such lasers [8].…”

One-dimensional numerical analysis of transistor lasers

“…There have been several important theoretical works about high frequency characteristics of TLs (Feng et al 2007;Faraji et al 2009;Shi et al 2011;Zhang and Leburton 2009;Then et al 2010;Shirao et al 2011). However, some questions are still not clear to date.…”

Minority current distribution in InGaAs/GaAs transistor-vertical-cavity surface-emitting laser

“…More detailed information regarding the simulation tools and physical parameters of the material are reported elsewhere. 10 The device was fabricated using metal-organic vaporphase epitaxy and consists of a pnp-HBT structure with a triple intrinsic InGaAs/GaAs quantum well (QW) active region embedded in the base. Figure 1 illustrates the schematics of the final device of which the details are presented elsewhere.…”