Thermal conductivity of nanoscale polycrystalline ZnO thin films

Huang, Zheng Xing; Tang, Zhen; Yu, Jianliang; Bai, Suyuan

doi:10.1016/j.physb.2010.11.099

Cited by 66 publications

(39 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The thermal conductivity was measured by thermoreflectance. More often, pure ZnO was analyzed at RT or below 5, 13, 14. The results at RT extend from 60 W/mK 5 down to 1.4 W/mK 13 depending on film thickness and deposition technique.…”

Section: Introductionmentioning

confidence: 99%

Thermal conductivity of thermoelectric Al‐substituted ZnO thin films

Vogel‐Schäuble

Jaeger

Romanyuk

et al. 2013

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Thermal conductivity of thermoelectric Al‐substituted ZnO thin films

Vogel‐Schäuble

Jaeger

Romanyuk

et al. 2013

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

show abstract

“…In our study, the interface resistance is observed as high for thicker film (≥600 nm) than 200 nm. It may be due to the volume of micropore increases with increase in thickness [14] and hence the interface resistance increases.…”

Section: Fig4 Interface Thermal Resistance Of 3w Green Led For Five mentioning

confidence: 99%

Performance of High Power Light Emitting Diode for Various Zinc Oxide Film Thickness as Thermal Interface Material

Shanmugan¹,

Devarajan²,

Hassan³

2013

IJRET

View full text Add to dashboard Cite

Oxide ceramic materials have attractive features either as filler or substrate materials in electronic packaging. Consequently, ZnO thin film for various thicknesses was prepared over Al substrates by RF sputtering and used as heat sink for high power LED. The thermal transient curve of device under test (DUT) was recorded for five boundary conditions. Rise in junction temperature (T J) was measured and observed low value (54.4°C) for 200 nm ZnO thin films at 350 mA. The difference in junction temperature rise (ΔT J) was observed as 7.46 °C at 700 mA when compared to bare Al substrates. The total thermal resistance (R th-tot) of the DUT was low for 200 nm ZnO thin film coated Al substrates. AFM images were used to evaluate the surface roughness factors and their influence on thermal resistance. As expected, the surface roughness, grain size and peak-valley distance were strongly influenced the heat flow.

show abstract

“…This method turned out to further improve the thermoelectric figure of merit of the bulk material due to a lowering of the thermal conductivity, while the electrical conductivity and the Seebeck coefficient remained high (Sootsman et al, 2009). This procedure has been applied to ZnO as well, with similar results, namely the reduction of the thermal conductivity by growing a highly disordered polycristalline material, i. e., by introducing interfaces (Alvarez-Quintana et al, 2010;Huang et al, 2011;Igamberdiev et al, 2010). A more defined way of introducing interfaces is to grow multilayers.…”

Section: Introductionmentioning

confidence: 97%