The author reports a case of vaginal calculi secondary to urethrovaginal fistula with vaginal stenosis in a 14-year-old girl. The initial urethrovaginal fistula and vaginal stenosis resulted from pelvic trauma after a traffic accident, with subsequent surgical urethral realignment and anterior colporrhaphy without success. The patient had continuous urinary incontinence for a duration of 11 years after surgery, and was finally diagnosed with urethrovaginal fistula with primary multiple vaginal calculi in our hospital. Surgeries were performed to remove the stones and repair the urethrovaginal fistula. Colpoplasty was also given by an obstetrician-gynecologist to solve the vaginal stenosis. After the procedure, the girl urinated normally. At her 3-month follow-up, the patient had no sign of urine leakage.
The Ge doped Sb2Te thin films (Ge2Sb2Te5, Ge0.15Sb2Te and Ge0.61Sb2Te) were deposited by magnetron co-sputtering using Ge and Sb2Te targets. Ge doping effect on the phase transition behaviors and thermal conductivity of the composite films was investigated. Ge0.61Sb2Te thin films have higher crystallization temperature (~200°C), larger crystallization activation energy (~3.28 eV) , better data retention (~120.8 °Cfor 10 years) and lower thermal conductivity (~0.23 W/mK). Ge0.61Sb2Te thin films is considered to be a promising storage medium for phase change random access memory due to its better thermal stability and lower power consumption.
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