Abstract:Oxide ceramic materials have attractive features either as filler or substrate materials in electronic packaging. Consequently, ZnO thin film for various thicknesses was prepared over Al substrates by RF sputtering and used as heat sink for high power LED. The thermal transient curve of device under test (DUT) was recorded for five boundary conditions. Rise in junction temperature (T J) was measured and observed low value (54.4°C) for 200 nm ZnO thin films at 350 mA. The difference in junction temperature rise… Show more
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