Structural, optical and electrical investigation of low-temperature processed zinc oxide quantum dots based thin films using precipitation-spin coating on flexible substrates

Muhammad, Sani; Nomaan, Ahlaam T.; Idris, Muhammad Idzdihar; Rashid, Marzaini

doi:10.1016/j.physb.2022.413806

Cited by 15 publications

(5 citation statements)

References 59 publications

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“…This value is less than zinc oxide bulk exciton Bohr diameter (4.68 nm) [16] supporting the quantum confinement effect. Similar ZnO QD particle sizes were reported elsewhere (3.6 nm, 3.7 nm and 3.5 nm) [17][18][19]. To measure the thickness of the spin-coated ZnO QD thin films, the cross-sectional FESEM images of the samples were recorded.…”

Section: Transmission Electron Microscopy and Cross-sectional Micrographmentioning

confidence: 65%

Facile low temperature processed nanostructure ZnO QD based thin films for potential perovskite solar cell: thickness dependence of crystal and electrical properties.

Muhammad

Nomaan

Olaoye

et al. 2022

J. Phys.: Conf. Ser.

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The precipitation-spin coating technique is employed to prepare nanostructure ZnO quantum dot (QD) films at different thicknesses. The X-ray diffraction analysis reveals the polycrystalline thin film growth along (101) plane and crystallinity improvement with thickness rise. The increase in thickness causes an increase (5.14 - 7.73 nm) and a decrease (3.39- 3.22 eV) in grain size and bandgap respectively. At optimized thickness, the ZnO QD thin film exhibits 72 % transmittance with the lowest resistivity of 16.24 x 10-2 Ωcm and highest carrier mobility of 15.38 cm2/Vs rendering it viable for potential utilization as an electron transport layer for perovskite devices.

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Section: Transmission Electron Microscopy and Cross-sectional Micrographmentioning

confidence: 65%

Facile low temperature processed nanostructure ZnO QD based thin films for potential perovskite solar cell: thickness dependence of crystal and electrical properties.

Muhammad

Nomaan

Olaoye

et al. 2022

J. Phys.: Conf. Ser.

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“…Therefore, five data (absorption and refractive index) for NiO from the previous research [23]- [34] were taken and used as an active layer to compare the (PCE). Since the data for the refractive index ZnO with N719 is unavailable, the refractive index from ZnO was used instead [35], [36]. The absorption coefficient (α) was determined using the Beer-Lambert relationship as stated in (3), where A is the absorbance and t is the thickness of the film [37].…”

Section: Electrical Modelmentioning

confidence: 99%

Analysis of nickel oxide as a counter electrode for dye-sensitized solar cells using OghmaNano software

Senin,

Rummaja,

Idris

et al. 2024

IJPEDS

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Dye-sensitized solar cells (DSSCs), a promising green technology, convert solar energy into electricity more cost-effectively than traditional solar cells. While platinum (Pt) is commonly used in DSSCs, its high cost and toxicity limit practical applications. Recent research aims to develop low-cost counter electrodes with high efficiency. Nickel oxide (NiO), a p-type semiconductor with a wide bandgap, good transmittance, and suitable work function, emerges as a potential alternative for counter electrode of DSSCs. In this work, DSSCs with NiO of thicknesses varying from 100 nm to 1000 nm were simulated to determine its influence on photovoltaic performance using OghmaNano software. The structure of simulated solar cells consists of NiO as counter electrode, zinc oxide (ZnO) as photoanode, N719 as dyes, electrolyte as charge carrier transport, and fluorine-doped tin oxide (FTO) as a contact layer. There are five data of NiO used as an active layer. From the simulation results, NiO-doped gold exhibits the highest power conversion efficiency (PCE) of 15.95% at a thickness of 700 nm, while pure NiO shows the lowest PCE with 4.53% at a thickness of 600 nm. These results have demonstrated that NiO can replace Pt as a counter electrode for DSSCs and doping plays a vital role in increasing efficiency.

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“…In hole transport materials, the highest occupied molecular orbit (HOMO) must match the valence band of perovskite materials for hole transport. According to the chemical composition, hole transport materials in perovskite solar cells can be divided into two types which is organic and inorganic hole transport materials [4]. Spiro-OMeTAD is the most used organic hole transport material, which shows good penetration in nanoscale perovskite and is a good match with the valence band energy of perovskite, although its hole mobility is not as high as that of other organic hole transport materials [5], [6].…”

Section: Introductionmentioning

confidence: 99%

Performance Analysis of Zinc Cobaltite (ZnCO₂O₄) As A Hole Transport Layer (HTL) For Perovskite Solar Cell Using OghmaNano Software and Taguchi Method Optimization.

Rummaja,

Idris,

Napiah

et al. 2024

J. Phys.: Conf. Ser.

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Perovskite solar cells (PSCs) are cost-effective and efficient photovoltaic cells that show great potential as an alternative to silicon solar cells. They possess desirable properties such as high mobility, direct bandgap, long carrier lifetime, and strong light absorption. However, the traditional materials used for the holes transport layer (HTL) in PSCs, such as PEDOT:PSS, SPIRO-OMETAD, and copper(I) iodide, have durability issues and lower carrier mobility. To overcome these challenges, Zinc Cobaltite (ZnCO2O4) with its advantages of hole transport, wide optical bandgap, and solution processability was investigated as a potential alternative HTL material. Through simulations using OghmaNano software and the Taguchi method, the device structure FTO/TiO2/CsPbI3/ZnCO2O4/Au was analyzed, and the performance was optimized by varying the thickness of the ZnCO2O4 layer. The simulation results showed a power conversion efficiency (PCE) of 32.23% with a ZnCO2O4 thickness of 300nm. ANOVA analysis revealed that the ZnCO2O4 thickness as the HTL had the most significant influence on PCE, followed by environmental temperature and the bandgap of ZnCO2O4. In particular, the ZnCO2O4 thickness had a substantial 70% impact on PCE, indicating that adjusting the thickness of ZnCO2O4 could lead to corresponding improvements in PCE.

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Structural, optical and electrical investigation of low-temperature processed zinc oxide quantum dots based thin films using precipitation-spin coating on flexible substrates

Cited by 15 publications

References 59 publications

Facile low temperature processed nanostructure ZnO QD based thin films for potential perovskite solar cell: thickness dependence of crystal and electrical properties.

Facile low temperature processed nanostructure ZnO QD based thin films for potential perovskite solar cell: thickness dependence of crystal and electrical properties.

Analysis of nickel oxide as a counter electrode for dye-sensitized solar cells using OghmaNano software

Performance Analysis of Zinc Cobaltite (ZnCO₂O₄) As A Hole Transport Layer (HTL) For Perovskite Solar Cell Using OghmaNano Software and Taguchi Method Optimization.

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Structural, optical and electrical investigation of low-temperature processed zinc oxide quantum dots based thin films using precipitation-spin coating on flexible substrates

Cited by 15 publications

References 59 publications

Facile low temperature processed nanostructure ZnO QD based thin films for potential perovskite solar cell: thickness dependence of crystal and electrical properties.

Facile low temperature processed nanostructure ZnO QD based thin films for potential perovskite solar cell: thickness dependence of crystal and electrical properties.

Analysis of nickel oxide as a counter electrode for dye-sensitized solar cells using OghmaNano software

Performance Analysis of Zinc Cobaltite (ZnCO2O4) As A Hole Transport Layer (HTL) For Perovskite Solar Cell Using OghmaNano Software and Taguchi Method Optimization.

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Product

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Performance Analysis of Zinc Cobaltite (ZnCO₂O₄) As A Hole Transport Layer (HTL) For Perovskite Solar Cell Using OghmaNano Software and Taguchi Method Optimization.