Thermal conductance of interfaces with amorphous SiO2 measured by time-resolved magneto-optic Kerr-effect thermometry

Abstract

We use time-resolved magneto-optic Kerr effect (TR-MOKE) and ultrathin Co/Pt transducer films to perform thermal transport experiments with higher sensitivity and greater time resolution than typically available in studies of interfacial thermal transport by time-domain thermoreflectance (TDTR). We measure the interface conductance between Pt and amorphous SiO 2 using Pt/Co/Pt ferromagnetic transducer films with thicknesses between 4.2 nm and 8.2 nm and find an average value of G Pt ≈ 0.3 GW m −2 K −1 . This result demonstrates that interfaces between metals and amorphous dielectrics can have a conductance corresponding to Kapitza lengths of the order of 4 nm, and are thus of relevance when engineering nanoscale devices. For thin SiO 2 layers our method also provides sensitivity to the interface conductance between SiO 2 and Si and we find G Si ≥ 0.6 GW m −2 K −1 as the lower limit.

A Review of Experimental and Computational Advances in Thermal Boundary Conductance and Nanoscale Thermal Transport across Solid Interfaces

“…In the experimental side, techniques such as TDTR and FDTR that have been used to study crystalline interfaces do not provide sufficient sensitivity to accurately quantify h K across amorphous interfaces as mentioned in the above paragraph. Using a different thermometry technique that utilizes the temperature of magnetic thin films, Kimling et al determine a high value of >0.6 GW m −2 K −1 for an amorphous SiO 2 /crystalline Si interface. Similarly, motivated by their computational findings as described in the above paragraph, Giri et al also demonstrate an ultrahigh conductance across amorphous/amorphous interfaces experimentally by utilizing amorphous multilayer structures.…”

“…The resistance associated with amorphous interfaces can defy the general trends that one would expect from interfaces formed between crystalline solids as discussed in the previous paragraph. This is shown in Figure b (square symbols) for several interfaces formed with amorphous materials that possess conductances that are much higher than the typical values observed for interfaces between crystalline solids . Similarly, for material systems in which electrons dominate interfacial heat flow such as for metal/metal interfaces, the values of h K can be greater than an order of magnitude as compared to the typical phonon‐dominated conductances .…”

Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry

“…MWm -2 K -1 (following Refs. 1,[19][20][21][22][23]. The heating profile is proportional to the laser spot size and the heat is dissipated mostly in the cross-plane direction into the Si substrate, typical for supported films as discussed below.…”

Interfacial Defect Vibrations Enhance Thermal Transport in Amorphous Multilayers with Ultrahigh Thermal Boundary Conductance

“…Experimentally measured thermal boundary conductance versus ratio of the elastic moduli of the two constituent materials (for Si/SiO 2 , Al/diamond, Pt/diamond, Al/SiC, Au/GaN, Al/Ge, GaN/SiC, TiN/MgO, SrRuO 3 /SrTiO 3 , Pt/Al 2 O 3 , ZnO/GaN, ZnO/HQ/ZnO, Si/vdW (van der Waals interface)/Si, Bi/Si, Mo/Si, Al/Si, Ni/Si, Cr/Si, Pt/Si, Au/Si, NiSi/Si, and CoSi 2 /Si).…”