Thermal characterisation of a copper-clip-bonded IGBT module with double-sided cooling

Zhu, Qingwei; Forsyth, A.J.; Todd, Rebecca; Mills, Liam

doi:10.1109/therminic.2017.8233804

Cited by 11 publications

(4 citation statements)

References 10 publications

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“…Conventional Al wirebonds were replaced with a flat Cu clip. Due to the high electrical conductivity and high thermal conductivity of Cu, the clip could not only improve the switching characteristics of the power module through reduction of parasitic inductance but also provide an additional heat conduction path from the top surface of the die [24], [25]. Compared with conventional wirebonded counterpart, up to 23% reduction in junction to case thermal resistance for one individual die and around 18% decrease for the parallel operation of two dies were observed in the single-sided cooling tests, while in the double-sided cooling experiments, an additional average of 18% thermal improvement was achieved due to the addition of a top fancooled heatsink mounted onto the Cu clip [25].…”

Section: ) Cu Clip Bonding Technologymentioning

confidence: 99%

Review of Packaging Schemes for Power Module

Hou

Wang²,

Cao

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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SiC devices are promising for outperforming Si counterparts in high-frequency applications due to its superior material properties. Conventional wirebonded packaging scheme has been one of the most preferred package structures for power modules. However, the technique limits the performance of a SiC power module due to parasitic inductance and heat dissipation issues that are inherent with aluminum wires. In this article, low parasitic inductance and high-efficient cooling interconnection techniques for Si power modules, which are the foundation of packaging methods of SiC ones, are reviewed first. Then, attempts on developing packaging techniques for SiC power modules are thoroughly overviewed. Finally, scientific challenges in the packaging of SiC power module are summarized.

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Section: ) Cu Clip Bonding Technologymentioning

confidence: 99%

Review of Packaging Schemes for Power Module

Hou

Wang²,

Cao

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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“…Due to mismatched coefficients of thermal expansion (CTE) between the wire bonds and semiconductor device, the bonded areas are prone to fatigue failure caused by thermomechanical stresses [8]. Paralleled wire bonds [9], ribbon bond [10], direct lead bonding [11], and copper clip structures [12] have been practiced to improve current capacity, reduce parasitic inductances, and improve reliability. Modules made by these interconnect techniques, which use long and thin conductors to connect to the device's top terminals, are still limited to cooling from the die-attach side of the device chips.…”

Section: Introductionmentioning

confidence: 99%

A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization

Ding

Liu

Ngo

et al. 2021

IEEE Trans. Power Electron.

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Planar, double-side cooled power modules are emerging in electric-drive inverters because of their low profile, better heat extraction, and lower package parasitic inductances. However, there is still a concern about their reliability due to the rigid interconnection between the device chips and two substrates of the power module. In this article, a porous interposer made of low-temperature sintered silver is introduced to reduce the thermomechanical stresses in the module. A double-side cooled halfbridge module consisting of two 1200 V, 149 A SiC MOSFETs was designed, fabricated, and characterized. By using the sintered-Ag instead of solid copper interposers, our simulation results showed that, at a total power loss of 200 W, the thermomechanical stress at the most vulnerable interfaces (interposer-attach layer) was reduced by 42% and in the SiC MOSFET by 50% with a tradeoff of only 3.6% increase in junction temperature. The sintered-Ag interposers were readily fabricated into the desired dimensions without postmachining and did not require any surface finishing for die bonding and substrate interconnection by silver sintering. The porous interposers were also deformable under a low force or pressure, which helped to accommodate chip thickness and/or substrate-to-substrate gap variations in the planar module structure, thus simplifying module fabrication. The experimental results on the electrical performance of the fabricated SiC modules validated the success of using the porous silver interposers for fabricating planar, double-side cooled power modules.

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“…Cu has several advantages over Al, such as a greater reliability at elevated temperatures, higher mechanical stability, superior electrical and thermal conductivity as well as compatibility with Cu-metallization of die-pads which alleviates the Al-Cu intermetallic growth concerns. A variety of Cu-based interconnects has been recently reported, i.e., Cu-clips, Cu-ribbons, Cu-pins, thin-film Cu, as well as thick Cu layers [12][13][14]. Additionally, two planar, top-side technologies, using metal-coated flexible foils, called Skin [15] and SiPLIT [11], were proposed and investigated by corporations Siemens and Semikron, respectively.…”

Section: Introductionmentioning

confidence: 99%

Sinterconnects: All-Copper Top-Side Interconnects Based on Copper Sinter Paste for Power Module Packaging

et al. 2021

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Copper sinter paste has been recently established as a robust die-attach material for high -power electronic packaging. This paper proposes and studies the implementation of copper sinter paste materials to create top-side interconnects, which can substitute wire bonds in power packages. Here, copper sinter paste was exploited as a fully printed interconnect and, additionally, as a copper clip-attach. The electrical and thermal performances of the copper-sinter paste interconnections (“sinterconnects”) were compared to a system with wire bonds. The results indicate comparable characteristics of the sinterconnect structures to the wire-bonded ones. Moreover, the performance of copper sinterconnects in a power module was further quantified at higher load currents via finite element analysis. It was identified that the full-area thermal and electrical contact facilitated by the planar sinterconnects can reduce ohmic losses and enhance the thermal management of the power packages.

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Thermal characterisation of a copper-clip-bonded IGBT module with double-sided cooling

Cited by 11 publications

References 10 publications

Review of Packaging Schemes for Power Module

Review of Packaging Schemes for Power Module

A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization

Sinterconnects: All-Copper Top-Side Interconnects Based on Copper Sinter Paste for Power Module Packaging

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