A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization

Ding, Chao; Liu, Heziqi; Ngo, Khai D. T.; Burgos, Rolando; Lu, Guo-Quan

doi:10.1109/tpel.2021.3070326

Cited by 48 publications

(3 citation statements)

References 44 publications

(44 reference statements)

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“…However, rigid Cu interconnections between the device and the substrates of the power module could bring reliability concerns. Ding et al demonstrated a porous interposer made of sintered silver, which reduces the thermomechanical stresses in the module by 42%-50% with a trade-off of only a 3.6% increase in T j [205].…”

Section: New Package Designs and Enhanced Coolingmentioning

confidence: 99%

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Qin

Albano

Spencer

et al. 2023

J. Phys. D: Appl. Phys.

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Power semiconductor device is a fundamental driver for advancement in power electronics, the technology for electric energy conversion. Power devices based on wide-bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors allow for smaller chip size, lower loss and higher frequency as compared to the silicon (Si) counterpart, thus enabling a higher system efficiency and smaller form factor. Amongst the challenges for the development and deployment of WBG and UWBG devices is the efficient dissipation of heat, an unavoidable by-product of the higher power density. To mitigate the performance limitations and reliability issues caused by self-heating, thermal management is required at both device and package levels. Particularly, packaging is a crucial milestone for the development of any power device technology; WBG and UWBG devices have both reached this milestone recently. This paper provides a timely review on the thermal management of WBG and UWBG power devices with an emphasis on the packaged devices. Additionally, emerging UWBG devices hold good promise for high-temperature applications due to the low intrinsic carrier density and the increased dopant ionization at elevated temperatures. The fulfillment of this promise in system applications, in conjunction with overcoming the thermal limitations of some UWBG materials, require new thermal management and packaging technologies. To this end, we provide perspectives on the relevant challenges, potential solutions and research opportunities, highlighting the pressing needs for the device-package, electro-thermal co-design and the high-temperature packages that can withstand the high electric field expected in UWBG devices.

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Section: New Package Designs and Enhanced Coolingmentioning

confidence: 99%

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Qin

Albano

Spencer

et al. 2023

J. Phys. D: Appl. Phys.

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“…The obtained power losses are the input to the FEA thermal model. The following governing equation used in [47][48][49][50] can be formulated to model the heat transfer problem in IGBT power modules.…”

Section: Fea Thermal Modelmentioning

confidence: 99%

Thermal Analysis of Si-Igbt Based Power Electronic Modules in 50kw Traction Inverter Application

Shahjalal¹,

Shams²,

Hossain

et al. 2022

SSRN Journal

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“…However, the mechanical characteristics tend to deteriorate with maximum allowed temperature and compromise the devices' integrity. Another approach is maximising the cooling by adapting the double-side cooling principle [2][3][4][5]. However, this requires a coating, which is able to enter the smallest crevices, like Parylene does, which is also used for medical instruments and implants [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Parylene as Coating for Power Semiconductor Devices

Clausner¹,

Hanf²,

Meier³

et al. 2021

ISPS'21 Proceedings

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The introduction of wide band gap semiconductor devices leads to smaller package sizes, higher power densities and higher switching frequencies, which is advantageous compared to the power electronics based on the conventional silicon devices. However, due to the small insulation distances and the limited temperature range of available package materials, it is not possible to exploit these advantages completely. In this study, the properties of Parylene coatings as passivation layers in power semiconductor devices is investigated. The material would be particularly advantageous for double-side cooled power modules because it can fill the small gaps between different conductive layers, which is not possible with conventional packaging technologies. Parylene is promising to provide an excellent insulation performance even in these areas and exhibits a good temperature stability. Furthermore, this polymer acts as a barrier for humidity, dirt and corrosive gasses. Two types of Parylene were tested using the High-Voltage, High Humidity, High Temperature Reverse Bias (HV-H³TRB) test on substrate level and the better Parylene type also on automotive three-phase modules. The results are encouraging, although the performance strongly depends on the Parylene type and although a sensitivity to the respecive surface condition to be coated became apparent.

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A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization

Cited by 48 publications

References 44 publications

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Thermal Analysis of Si-Igbt Based Power Electronic Modules in 50kw Traction Inverter Application

Parylene as Coating for Power Semiconductor Devices

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