Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO<sub>2</sub> Gate Dielectric

Gao, Z.; Romero, M. F.; Calle, F.

doi:10.1109/ted.2018.2842205

Cited by 16 publications

(11 citation statements)

References 44 publications

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“…While for charged biomolecules analysis κ = 14 is considered in this paper pertaining to charged amino acids (κ = 11-25). 24 The reference device has air (κ = 1) in the cavity. To emulate the effect of charged biomolecules, fixed charges are introduced at the oxide/semiconductor interface having a charge density, ρ.…”

Section: Moshemt G Gs T Ds Dsmentioning

confidence: 99%

“…Impact of fill profile and fill percent.-Different fill profiles and fill percentages can be used to calculate the limit of detection of devices for neutral biomolecules. 24,30 Figures 9a-9c shows a vertical (Type A), horizontal (Type B), and a tapered (Type C) fill profile respectively that is used to study the impact of fill percentage in the biosensor. The amount of biomolecule entering the cavity is also a limiting factor in biosensing applications.…”

Section: Name Of Gate Dielectric Dielectric Constantmentioning

confidence: 99%

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Sensitivity Analysis of Al_0.3Ga_0.7N/GaN Dielectric Modulated MOSHEMT Biosensor

Pandiaraj

Dastidar

Patra

et al. 2023

ECS J. Solid State Sci. Technol.

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Emerging and newly proposed devices integrate various materials at different scales (nano to submicron), revealing sensor response. Prefab simulation is in great demand to elucidate fundamental biosensor phenomena based on transistors. Numerous high electron mobility transistor (HEMT)-based biosensors have been developed, however metal oxide semiconductor HEMT (MOSHEMT) deserves to be further investigated. Sensitivity analysis with neutral and charged biomolecules was carried out using single gate high-κ dielectric MOSHEMT through computer aided design simulation. Device performance was evaluated through shift (sensing action) of device parameters like two-dimensional electron gas, on-current, transconductance, drain current, and output conductance due to immobilization of biomolecules in cavity created under gate. For neutral biomolecule (κ=8), fluctuation in on-current, transconductance, drain current, and output conductance is determined to be 330.3 μA/μm,102.0 μS/μm,319.0μA/μm,and 534.9 μS/μm, respectively. Positively charged biomolecules were more sensitive to device than negatively charged ones. Analysis was done on response to the fill rates of the biomolecules in the cavity. For vertical, horizontal, and tapered profiles, the transconductance sensitivities are 0.65, 0.17, and 0.32 and drain current sensitivities are 0.25, 0.16, and 0.27 at lowest fill (25%). Therefore, AlGaN/ GaN dielectric modulated MOSHEMT assures that the device can be used in sensitive intelligent biomedical applications.

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Section: Moshemt G Gs T Ds Dsmentioning

confidence: 99%

Section: Name Of Gate Dielectric Dielectric Constantmentioning

confidence: 99%

Sensitivity Analysis of Al_0.3Ga_0.7N/GaN Dielectric Modulated MOSHEMT Biosensor

Pandiaraj

Dastidar

Patra

et al. 2023

ECS J. Solid State Sci. Technol.

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“…Although significant progress has been achieved to improve the performance of GaN devices, noticeable gaps still remain between demonstrated device performance in the real market applications and the theoretical expectations. The existence of large amount of surface states in AlGaN and GaN have been found to be the root cause of device current collapse and some reliability issues, which is one of the main challenges in fabricating high performance AlGaN/GaN HEMTs [93][94][95][96][97]. These surface states may come from dangling bonds of the surface atoms, defects at the surface as grown, plasma damages during the processes, the foreign contaminations and so forth.…”

Section: Surface Passivationmentioning

confidence: 99%

“…The basic structure of surface passive layer is illustrated in the Figure 6. Many different insulation materials have been explored as the surface passivation layer for AlGaN/GaN HEMTs, including SiO 2 [93,99], Si 3 N 4 [100], ZrO 2 [94,101], HfO 2 [95,96], Ga 2 O 3 [43,102], AlN [103][104][105][106], Sc 2 O 3 [107], TiO 2 [108], ZnO 2 [109], NiO [110], Ta 2 O5 [111], Al 2 O 3 [112][113][114], AlON [43] and so forth. In addition to the surface passivation, dielectric-free passivation technologies have also been proposed and demonstrated, for example, oxygen plasma oxidization [115,116], ozone oxidization [117], chemical oxidization [118], SiH 4 treatment [119] and so forth.…”

Section: Surface Passivationmentioning

confidence: 99%

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

et al. 2018

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GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

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“…Charge trapping in the bulk oxide defects may lead to a hysteresis in the device characteristics and an increase in gate leakage . The time-dependent degradation is accelerated in the presence of these traps, leading to an early breakdown of the devices . The off-state degradation is among the major operating challenges for oxide-HEMTs in switching applications as the drain-to-source voltage is maximum in this condition, and the gate-to-drain diode path bears the peak voltage drop.…”

Section: Introductionmentioning

confidence: 99%

Off-State Degradation and Recovery in Oxide/AlGaN/GaN Heterointerfaces: Importance of Band Offset, Electron, and Hole Trapping

Jha

Meer

Ganguly

et al. 2020

ACS Appl. Electron. Mater.

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The properties of the oxide/AlGaN heterointerface are investigated from field-dependent off-state degradation and recovery in thermally grown NiO x -, TiO2-, and Al2O3-based metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). Al- and Ti-oxides form type-I straddling band alignment with positive and negative band offsets, respectively, and Ni-oxide forms type-II staggered band alignment with AlGaN. These oxides show promising results for high-performance HEMTs suitable for switching applications. The oxides are grown by rapid thermal oxidation of a thin film of the respective metals. The properties are quantified from the degradation and recovery of critical device parameters. The oxides largely follow the field-dependent degradation by electron and hole trapping. The critical fields for electron–hole pair generation and dominance of hole trapping over electron trapping have great significances in applied power electronics due to the presence of inherently large voltage transients. In addition to the quality of interfaces, oxide band alignment with AlGaN is important. The degradation and recovery are faster in Al2O3, indicating the presence of shallow traps and type-I band alignment. Even though NiO x shows the highest gate leakage current due to the type-II heterostructure, it shows negligible degradation in most of the parameters. The prestressed TiO2 devices show a performance similar to that of Al2O3 samples. Meanwhile, TiO2 shows the least degradation and endures the largest off-state voltage owing to the better heterointerfacial properties and type-I band alignment with negative band offsets. Both Al2O3 and TiO2 follow the field-dependent degradation due to electron trapping followed by hole trapping, which is concluded from the crossover in the threshold voltage for the formation of two-dimensional electron gas and confirmed by repeating the measurements for various gate-to-drain separated devices. The device breakdown for the applied off-state step stress occurs at 120, 140, and 100 V for NiO x , TiO2, and Al2O3, respectively. The corresponding gate-connected field plate devices show breakdown voltages in an excess of 600 V.

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Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO₂ Gate Dielectric

Cited by 16 publications

References 44 publications

Sensitivity Analysis of Al_0.3Ga_0.7N/GaN Dielectric Modulated MOSHEMT Biosensor

Sensitivity Analysis of Al_0.3Ga_0.7N/GaN Dielectric Modulated MOSHEMT Biosensor

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Off-State Degradation and Recovery in Oxide/AlGaN/GaN Heterointerfaces: Importance of Band Offset, Electron, and Hole Trapping

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Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric

Cited by 16 publications

References 44 publications

Sensitivity Analysis of Al0.3Ga0.7N/GaN Dielectric Modulated MOSHEMT Biosensor

Sensitivity Analysis of Al0.3Ga0.7N/GaN Dielectric Modulated MOSHEMT Biosensor

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Off-State Degradation and Recovery in Oxide/AlGaN/GaN Heterointerfaces: Importance of Band Offset, Electron, and Hole Trapping

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Product

Resources

About

Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO₂ Gate Dielectric

Sensitivity Analysis of Al_0.3Ga_0.7N/GaN Dielectric Modulated MOSHEMT Biosensor

Sensitivity Analysis of Al_0.3Ga_0.7N/GaN Dielectric Modulated MOSHEMT Biosensor