1997
DOI: 10.1109/95.588577
|View full text |Cite
|
Sign up to set email alerts
|

Thermal analysis of GaAs power monolithic microwave IC's mounted with epoxy attachment

Abstract: The effect of chip-mounting attachment on the thermal resistance of GaAs power field effect transistor (FET) modules has been experimentally investigated. The thermal resistance was evaluated for different GaAs chip thickness of 150 and 250 m through an electrical method utilizing temperature dependence of Schottky-barrier in the GaAs metal semiconductor FET's (MESFET's). The thermal resistance of low-cost epoxy-mounted GaAs chips, suitable for uniplanar monolithic microwave IC's (MMIC's), was found not to inc… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
4
0
4

Year Published

2003
2003
2016
2016

Publication Types

Select...
3
2

Relationship

0
5

Authors

Journals

citations
Cited by 7 publications
(10 citation statements)
references
References 6 publications
1
4
0
4
Order By: Relevance
“…Thermal coupling between stages 1 and 2 seems to be independent of temperature, because the measured relationship between ATI and P0~s2 looks rather linear even though measurements with different PoIsl are shown. This reinforces the fact that the influence of the variation of substrate thermal properties with temperature is almost negligible when poor thermal conductors like epoxy are employed as attachment [16]. Additionally different bias conditions lead approximately to the same thermal coupling response; suggesting that fiom the thermal point of view, in order to obtain a good approximation of the MMlC thermal behavior, the selection of the bias point is not critical when using the proposed method.…”
Section: New Indirect Electrical Methods For the Thermal Characterizatsupporting
confidence: 77%
See 2 more Smart Citations
“…Thermal coupling between stages 1 and 2 seems to be independent of temperature, because the measured relationship between ATI and P0~s2 looks rather linear even though measurements with different PoIsl are shown. This reinforces the fact that the influence of the variation of substrate thermal properties with temperature is almost negligible when poor thermal conductors like epoxy are employed as attachment [16]. Additionally different bias conditions lead approximately to the same thermal coupling response; suggesting that fiom the thermal point of view, in order to obtain a good approximation of the MMlC thermal behavior, the selection of the bias point is not critical when using the proposed method.…”
Section: New Indirect Electrical Methods For the Thermal Characterizatsupporting
confidence: 77%
“…On the contrary, if solders with high thermal conductivity are employed, most of the temperature rise is due to the poor thermal characteristics of the GaAs substrate. In the latter case GaAs thermal conductivity variation with temperature has a definite impact on the amplifier peak temperature, [17], (thus, the thermal analysis has to include this fact), while in the former case the influence is insignificant, [16], (so, GaAs thermal conductivity dependence on temperature can he neglected). It is also shown the equivalent simplified thermal circuit.…”
Section: Description Of the 3-d Mmic Thermal Problemmentioning
confidence: 98%
See 1 more Smart Citation
“…f Gain(t 2 ) − f Gain(t 1 ) = T 01 e −t 1 /t th 1 − e −t 2 /t th 1 (4) f Gain(t 4 ) − f Gain(t 3 ) = T 01 e −t 3 /t th 1 − e −t 4 /t th 1 (5) where t 1 , t 2 , t 3 and t 4 are four points on the time axis in Fig. 4.…”
Section: Gain Against T Cmentioning
confidence: 99%
“…Using these techniques it is not possible to measure T c of a fully packaged device. A more convenient approach is to measure T c indirectly on the basis of relations between various electrical properties and T c [4,5]. However, these methods are not suitable for capturing dynamic T c responses and are therefore usually limited to the characterisation of thermal resistances.…”
Section: Introductionmentioning
confidence: 99%