Ninteenth Annual IEEE Semiconductor Thermal Measurement and Management Symposium, 2003.
DOI: 10.1109/stherm.2003.1194347
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Precise and simple DC-electrothermal characterization of MMIC power amplifiers

Abstract: A new indirect electrical method for the thermal characterization of microwave monolithic integrated circuit (MMIC) power amplifiers is presented. Unlike other methods previously proposed the suggested procedure is easy to apply on power amplifiers with complex structures, formed by the combination of several amplifying stages on the same die. The new technique is specially indicated for MMICs formed by FET devices and mounted with epoxy attachment. The procedure uses the thermal coupling response between mult… Show more

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Cited by 3 publications
(3 citation statements)
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References 25 publications
(11 reference statements)
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“…The procedure suggested in [9] was employed to obtain R th ϭ 45.4ЊC/W for this power amplifier (R th also includes the thermal effects due to its mounting structure). Measurements are shown in Figure 2 for three different gate-to-source voltages V g ϭ (Ϫ1.0, Ϫ1.1, Ϫ1.2) V, and for a wide set of room temperatures ranging from T amb ϭ 80.0ЊC to T amb ϭ Ϫ5.0ЊC.…”
Section: Measurementsmentioning
confidence: 99%
See 1 more Smart Citation
“…The procedure suggested in [9] was employed to obtain R th ϭ 45.4ЊC/W for this power amplifier (R th also includes the thermal effects due to its mounting structure). Measurements are shown in Figure 2 for three different gate-to-source voltages V g ϭ (Ϫ1.0, Ϫ1.1, Ϫ1.2) V, and for a wide set of room temperatures ranging from T amb ϭ 80.0ЊC to T amb ϭ Ϫ5.0ЊC.…”
Section: Measurementsmentioning
confidence: 99%
“…The thermal resistance of the device under test must also be determined. This can be done by following any of the multiple approaches at hand [9,10]. To illustrate the usefulness of the suggested method, it was applied to a commercial X-band MMIC FET power amplifier.…”
Section: Introductionmentioning
confidence: 99%
“…El método de caracterización electro-térmica propuesto sigue el diagrama de flujo que se aprecia en la figura 10.1 y ha sido descrito en [149,150,151]. dos primeros pasos en que se divide el método consisten, por un lado, en la obtención de un modelo de fuente de corriente para un transistor individual de los que forman el MMIC de potencia y, por otro, en el cálculo de la matriz de resistencias térmicas, que relaciona los consumos en los transistores con sus temperaturas internas, empleando el simulador térmico descrito en el capítulo 6.…”
Section: Parte IVunclassified