Characterising thermal resistances and capacitances of GaN high‐electron‐mobility transistors through dynamic electrothermal measurements

Abstract

This study presents a method to characterise thermal resistances and capacitances of GaN high‐electron‐mobility transistors (HEMTs) through dynamic electrothermal measurements. A measured relation between RF gain and the channel temperature (Tc) is formed and used for indirect measurements of dynamic Tc responses. Thermal resistances and capacitances are characterised on the basis of measured Tc responses and power dissipation (Pd) in HEMTs. The proposed method makes it possible to measure fast Tc responses and avoids the use of imaging and spectroscopy techniques. Additionally, the proposed method ensures that trapping effects have insignificant impact on the measurements of Tc responses, which makes this method suitable for GaN HEMT characterisation. The applicability of this method is demonstrated by characterising thermal resistances and capacitances of a CREE CGH40006P GaN HEMT.