2014
DOI: 10.1049/iet-map.2013.0313
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Characterising thermal resistances and capacitances of GaN high‐electron‐mobility transistors through dynamic electrothermal measurements

Abstract: This study presents a method to characterise thermal resistances and capacitances of GaN high‐electron‐mobility transistors (HEMTs) through dynamic electrothermal measurements. A measured relation between RF gain and the channel temperature (Tc) is formed and used for indirect measurements of dynamic Tc responses. Thermal resistances and capacitances are characterised on the basis of measured Tc responses and power dissipation (Pd) in HEMTs. The proposed method makes it possible to measure fast Tc responses an… Show more

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