Theory of surface noise under Coulomb correlations between carriers and surface states

Kochelap, V. A.; Sokolov, V. N.; Bulashenko, O. M.; Rubı́, J. M.

doi:10.1063/1.1512698

Cited by 9 publications

(3 citation statements)

References 28 publications

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“…In fact, the 1/f noise dependence develops as a result of stochastic GR processes with distributed characteristic times of capture/decapture events. This interpretation is valid for macroscopically uniform bulk samples [34] and for surface/ edge noise in uniform conductive channels [36,37]. However, for a nonuniform distribution of the electrons and, consequently, nonuniform noise sources, temporal evolution of a fluctuation involves diffusion processes.…”

Section: Noise Spectroscopy Of Nanoribbons In the Nonlinear Regimementioning

confidence: 95%

Electronic edge-state and space-charge phenomena in long GaN nanowires and nanoribbons

et al. 2017

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We studied space-charge-distribution phenomena in planar GaN nanowires and nanoribbons (NRs). The results obtained at low voltages demonstrate that the electron concentration changes not only at the edges of the NR, but also in the middle part of the NR. The effect is stronger with decreasing NR width. Moreover, the spatial separation of the positive and negative charges results in electric-field patterns outside the NR. This remarkable feature of electrostatic fields outside the NR may be even stronger in 2D material structures. For larger voltages the space-charge-limited current (SCLC) effect determines the main mechanism of transport in the NR samples. The onset of the SCLC effect clearly correlates with the NR width. The results are confirmed by noise spectroscopy studies of the NR transport. We found that the noise increases with decreasing NR width and the shape of the spectra changes with voltage increase with a tendency toward slope (3/2), reflecting diffusion processes due to the SCLC effect. At higher voltages noise decreases as a result of changes in the scattering mechanisms. We suggest that the features of the electric current and noise found in the NRs are of general character and will have an impact on the development of NR-based devices.

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Section: Noise Spectroscopy Of Nanoribbons In the Nonlinear Regimementioning

confidence: 95%

Electronic edge-state and space-charge phenomena in long GaN nanowires and nanoribbons

et al. 2017

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“…In contrast, when V sub = 0 V, the interface traps near the bottom surface of SOI layer are not sufficiently shielded, and some of the electrons contributing to the subthreshold conduction are trapped near the bottom surface. Since the SOI layer thickness is less than the Debye length in this situation, it is expected according to the theoretical model proposed by V. A. Kochelap et al [42,43] that Coulomb interactions between surface electrons and charged interface traps at the bottom surface may suppress the subthreshold current fluctuation because the surface-noise-suppression factor defined by them increases.…”

Section: Resultsmentioning

confidence: 99%

Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

Ōmura

2018

Micromachines

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This paper theoretically revisits the low-frequency noise behavior of the inversion-channel silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) and the buried-channel SOI MOSFET because the quality of both Si/SiO2 interfaces (top and bottom) should modulate the low-frequency fluctuation characteristics of both devices. It also addresses the low-frequency noise behavior of sub-100-nm channel SOI MOSFETs. We deepen the discussion of the low-frequency noise behavior in the subthreshold bias range in order to elucidate the device’s potential for future low-voltage and low-power applications. As expected, analyses suggest that the weak inversion channel near the top surface of the SOI MOSFET is strongly influenced by interface traps near the top surface of the SOI layer because the traps are not well shielded by low-density surface inversion carriers in the subthreshold bias range. Unexpectedly, we find that the buried channel is primarily influenced by interface traps near the top surface of the SOI layer, not by traps near the bottom surface of the SOI layer. This is not due to the simplified capacitance coupling effect. These interesting characteristics of current fluctuation spectral intensity are explained well by the theoretical models proposed here.

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“…In fact, the f 1/ noise dependence develops as the result of stochastic G-R processes with distributed characteristic times of capture/decapture events. This interpretation is valid for macroscopically uniform bulk samples [22] and for surface/edge noise in uniform conductive channels [22,23]. However, for a nonuniform distribution of the electrons and, consequently, nonuniform noise sources, temporal evolution of a fluctuation involves diffusion processes.…”

mentioning

confidence: 95%

Electric Current and Noise in Long GaN Nanowires in the Space-Charge Limited Transport Regime

et al. 2017

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We studied electric current and noise in planar GaN nanowires (NWs). The results obtained at low voltages provide us with estimates of the depletion effects in the NWs. For larger voltages, we observed the space-charge limited current (SCLC) effect. The onset of the effect clearly correlates with the NW width. For narrow NWs the mature SCLC regime was achieved. This effect has great impact on fluctuation characteristics of studied NWs. At low voltages, we found that the normalized noise level increases with decreasing NW width. In the SCLC regime, a further increase in the normalized noise intensity (up to 10 4 times) was observed, as well as a change in the shape of the spectra with a tendency towards slope-3/2. We suggest that the features of the electric current and noise found in the NWs are of a general character and will have an impact on the development of NW-based devices.

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Theory of surface noise under Coulomb correlations between carriers and surface states

Cited by 9 publications

References 28 publications

Electronic edge-state and space-charge phenomena in long GaN nanowires and nanoribbons

Electronic edge-state and space-charge phenomena in long GaN nanowires and nanoribbons

Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

Electric Current and Noise in Long GaN Nanowires in the Space-Charge Limited Transport Regime

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