2013
DOI: 10.1109/jqe.2012.2228166
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Theoretical Study of Metal-Insulator-Metal Tunneling Diode Figures of Merit

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Cited by 47 publications
(29 citation statements)
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“…Eliasson 165 developed a comprehensive model to predict rectification efficiency, tunneling transmission probability and estimation of device resistance in thin MIM diodes, with the exception of image forces and effective mass. Recently Hashem et al 192 developed more accurate models to simulate the I-V curves and figures of merit of MIM devices. The model can be used for multiple insulator layers, whereas Simmons model is only limited to single insulator predictions.…”
Section: Modelling Approachesmentioning
confidence: 99%
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“…Eliasson 165 developed a comprehensive model to predict rectification efficiency, tunneling transmission probability and estimation of device resistance in thin MIM diodes, with the exception of image forces and effective mass. Recently Hashem et al 192 developed more accurate models to simulate the I-V curves and figures of merit of MIM devices. The model can be used for multiple insulator layers, whereas Simmons model is only limited to single insulator predictions.…”
Section: Modelling Approachesmentioning
confidence: 99%
“…A recent patent 209 proposes the use of a triple-insulator barrier which adds further complexity to the fabrication process. The models created by Hashem et al 192 will help identify which material systems to concentrate experimental efforts on. Improved performance from multiple barrier tunnel diodes is yet to be realised but the few reports that exist suggest significant potential.…”
Section: Metal-insulator-insulator-metal Diodesmentioning
confidence: 99%
“…Trials have been performed to improve its accuracy by introducing a linear potential barrier increase inside the cell instead of a constant value [55], as shown in Figure 7b. This can also be referred to as the Airy function transfer matrix method (AF-TMM) [56], which gives identical results to that obtained by the NEGF algorithm as stated by Hashem et al [56] for their model.…”
Section: Transfer Matrix Methodmentioning
confidence: 60%
“…Even so, its performance is superior to that of WKB in particular for low barrier MIM diodes [47]. Another added value for this method is its adaptability to simulate multi-insulator diodes as shown by Hashem et al [56]. Moreover, the algorithm simulation output is in close agreement with the more computer-intensive algorithms such as the quantum transmitting boundary method (QTBM) [47] and the non-equilibrium Green function method (NEGF) [56], which will be encountered later on.…”
Section: Transfer Matrix Methodmentioning
confidence: 99%
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