Successful plasma polymerisation of a fluorocarbon compound (c-C 4 F 8 ) using an atmospheric pressure plasma jet is described. The source is operated with argon as working gas at a flow rate of 6 slm and 10 -100 sccm admixtures of c-C 4 F 8 . Deposition is limited to a discharge regime with strong localization and was observed for conductive substrates only (Al and Si). The deposition process is characterized by a high local growth rate (40 nm/s) and produces films which show a Teflon-like chemical structure and hydrophobicity. The coatings are characterised using X-ray photo electron spectroscopy (XPS), profilometry, and Scanning electron microscopy (SEM). Changing the ambient atmosphere from protective N 2 to normal air only reduces the deposition rate but does not change the chemistry of the film.Based on the results of parameter variations and the electrical relations of the jet-setup, the special form of the deposition regime of the jet is discussed and considered to be a γ-mode discharge dependent on the choice of substrate material.Confidential: not for distribution.