Theoretical origins of Nss peaks observed in Gray-Brown MOS studies

Abstract

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Experimental evidence of the existence of multiple charged states at Al2O3/GaN interfaces

“…The distribution shown in figure 3(c) leads to a discussion about the defect structures for the GaN and Si MOS capacitors. For the Si MOS capacitor, the σ n values are 10 −15 to 10 −16 cm 2 , which are comparable values with the reported values [19,33]. From the comparison of the measured values and the reported values, the origin of the interface traps is able to be dangling bonds related to the trivalent Si at the SiO 2 /Si interface.…”

Experimental studies on 1/f noise

“…A complete picture can only be had by combining results obtained with two or more measuring techniques. The peaks in the interface state density near the band edges have often been questioned by, for example, Boudry (1973) and Declerck et a1 (1973). The bias dependence of the noise in MOST is often explained by the energy distribution of the interface states in the gap.…”

Theoretical calculations of surface-state loss in three-phase charge-coupled devices

“…The charge collected at a potential well due to thermal generation for an interval equal For the (111) orientation, in addition to the linear approximation for N,, snd CJ distribution, we also performed calculations with Boudry's (1973) equations which approximate the Nss and CJ distribution obtained by Deuling et al The N,, and CJ distribution thus obtained are shown with broken curves in figure 1, and the calculated inefficiency values are shown with broken curves in figures 2 and 3. It is seen that the actual distribution of N,, and U used is quite significant in the calculations, and that differing distributions can alter the estimated values of inefficiency to a considerable extent.…”