Theoretical and experimental aspects of three-dimensional infrared photothermal radiometry of semiconductors

Ikari, Tetsuo; Salnick, Alex; Mandelis, Andreas

doi:10.1063/1.369368

Cited by 39 publications

(36 citation statements)

References 11 publications

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“…[3], Chap. 9.12), with adjustable electronic transport coefficients [6,13]. The effect of the back-surface defect was modeled as a change in the recombination velocity S 2 (front-surface probing) only.…”

Section: Quantitative Pcr Measurements Of Electronic Transport Propermentioning

confidence: 99%

Photo-carrier radiometry of semiconductors: A novel powerful optoelectronic diffusion-wave technique for silicon process non-destructive evaluation

Mandelis

2006

NDT & E International

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Section: Quantitative Pcr Measurements Of Electronic Transport Propermentioning

confidence: 99%

Photo-carrier radiometry of semiconductors: A novel powerful optoelectronic diffusion-wave technique for silicon process non-destructive evaluation

Mandelis

2006

NDT & E International

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“…Recently, a complete theoretical model for the three-dimensional infrared PTR signal from strongly absorbed incident radiation has been presented. 12 In this work, that theoretical model is expanded to describe the three-dimensional PTR signal from a semiconductor undergoing low-level carrier injection from an optical source with an arbitrary absorption coefficient.…”

Section: Theoretical Modelmentioning

confidence: 99%

Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers I: Theoretical aspects

Shaughnessy

Mandelis

2003

Journal of Applied Physics

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Articles you may be interested inThree-layer photocarrier radiometry model of ion-implanted silicon wafers J. Appl. Phys. 95, 7832 (2004); 10.1063/1.1748862Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects A theoretical model for the photothermal radiometric ͑PTR͒ signal from an indirect band-gap semiconductor excited by a laser of arbitrary wavelength is presented. The model has been used to investigate the spectral dependence of the sensitivity of the PTR signal to variations in the electronic transport parameters of the sample. Simulations show slight variations of the sensitivity to carrier lifetime and carrier diffusivity with excitation wavelength due to changes in the strength of the thermal contribution to the signal that are a result of changes in the difference between the photon energy and the band gap. The sensitivity of the PTR signal to changes in the front surface recombination velocity is shown to have a strong dependence on the excitation wavelength with the sensitivity decreasing as the absorption depth of the excitation source increases, allowing spectroscopic carrier-density-wave depth profilometric measurements.

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“…PTR 1,2 has been shown to possess distinct advantages, such as remote in-situ evaluation and optimal sensitivity to the electronic transport properties of the laser photoexcited material. 3 Using the 3D-PTR technique 4,5 due to spatial constraints imposed by tightly focused Gaussian laser beams, one can obtain electronic transport parameters of Si wafers, including the carrier recombination lifetime, τ, the minority carrier diffusion coefficient, D n, or D p , the carrier diffusion length, L D , the front surface recombination velocity, S 1 , as well as the thermal diffusivity, α.…”

Section: (Received June 29 2000; Accepted October 30 2000)mentioning

confidence: 99%

Minority carrier lifetime and iron concentration measurements on p-Si wafers by infrared photothermal radiometry and microwave photoconductance decay

Rodrı́guez

Mandelis

Pan

et al. 2000

Journal of Applied Physics

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A comparative study of electronic transport properties of p-Si wafers intentionally contaminated with Fe was performed using infrared photothermal radiometry (PTR) and microwave photoconductance decay (µ-PCD). Strong correlations were found between PTR and µ-PCD lifetimes in a lightly contaminated wafer with no significant PTR transient behavior. The absolute PTR lifetime values were larger than the local averaged µ-PCD values, due to the different excitation wavelengths and probe depths. In a heavily contaminated wafer the µ-PCD and PTR lifetime correlation was poorer. PTR measurements were highly sensitive to Iron concentration, most likely due to the dependence of the bulk recombination lifetime on it. Rapid-scanned (non-steady-state) PTR images of the wafer surface exhibited strong correlations with both µ-PCD lifetime and Iron concentration images in both heavily and lightly contaminated wafers. For the lightly and uniformly contaminated wafer, PTR scanning imaging was found to be more sensitive to iron concentration and lifetime variations than µ-PCD images.

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Theoretical and experimental aspects of three-dimensional infrared photothermal radiometry of semiconductors

Cited by 39 publications

References 11 publications

Photo-carrier radiometry of semiconductors: A novel powerful optoelectronic diffusion-wave technique for silicon process non-destructive evaluation

Photo-carrier radiometry of semiconductors: A novel powerful optoelectronic diffusion-wave technique for silicon process non-destructive evaluation

Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers I: Theoretical aspects

Minority carrier lifetime and iron concentration measurements on p-Si wafers by infrared photothermal radiometry and microwave photoconductance decay

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