Articles you may be interested inCarrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers I: Theoretical aspects J. Appl. Phys. 93, 5236 (2003); 10.1063/1.1565498Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects
Articles you may be interested inSemiconductor microwave mirror for a measurement of the dynamical Casimir effect Rev. Sci. Instrum. 75, 4967 (2004); 10.1063/1.1808892Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers I: Theoretical aspects J. Appl. Phys. 93, 5236 (2003); 10.1063/1.1565498Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects A quantitative theoretical comparison between two photothermal techniques-the photomodulated reflectance ͑PMR͒ and the photothermal infrared radiometry ͑PTR͒-from the standpoint of their relative sensitivity to the thermal and carrier plasma waves in semiconductors is presented. The coefficients representing the relative contributions from the thermal and plasma waves to the total PMR and PTR signals arising as a result of the same temperature increase and photoinjected excess carrier concentration are calculated for three crystalline semiconductors: Si, Ge, and GaAs. The PTR signal is found to be extremely sensitive to the plasma-wave effects exhibiting up to five orders of magnitude higher carrier plasma-to-thermal contrast than that of the PMR method.
A theoretical model for the photothermal radiometric signal from semiconductors of finite thickness has been used to measure simultaneously the carrier diffusion coefficient, carrier lifetime, and surface recombination velocity of FZ Si wafers with very long bulk carrier lifetimes (industrial microelectronic grade). The results showed the importance of accounting for the finite thickness of the substrate in obtaining accurate measurements of these parameters using the entirely noncontacting radiometric approach.
Theoretical and experimental aspects of three-dimensional infrared photothermal radiometry of semiconductors A general three-dimensional theoretical model for fundamental and harmonic response generation as a result of periodic heating of a system consisting of a nonlinear layer with temperature-dependent thermal conductivity and specific heat and a linear substrate is developed. Analysis of the fundamental component of the surface temperature shows that the nonlinear thermal conductivity alone does not affect the phase of the thermal-wave field. The efficiency of the thin nonlinear layer as an energy conversion filter that drives the harmonic response of the substrate is shown by the analysis of the limiting cases of the theoretical model.
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