Minority carrier lifetime and iron concentration measurements on <i>p</i>-Si wafers by infrared photothermal radiometry and microwave photoconductance decay

Rodrı́guez, Mario; Mandelis, Andreas; Pan, Guohua; García, José Antonio Tornero; Gorodokin, Vladimir; Raskin, Y.

doi:10.1063/1.373506

Cited by 32 publications

(19 citation statements)

References 12 publications

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“…3 The system has been modified to include a tunable titanium:sapphire ͑Ti:Sa͒ laser capable of operating over the wavelength range of 690-1100 nm whose emissions are monitored by a wavemeter with less than 0.1 nm resolution. An argon ion laser is used to pump the Ti:Sa laser or the Ti:Sa can be bypassed so that the Ar ϩ emission can be focused directly on the sample to perform experiments with 514 nm excitation.…”

Section: Experimental Methodsmentioning

confidence: 99%

Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects

Shaughnessy

Mandelis

2003

Journal of Applied Physics

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Articles you may be interested inH + ion-implantation energy dependence of electronic transport properties in the MeV range in n -type silicon wafers using frequency-domain photocarrier radiometry Three-layer photocarrier radiometry model of ion-implanted silicon wafers J. Appl. Phys. 95, 7832 (2004); 10.1063/1.1748862Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers I: Theoretical aspectsThe experimental verification of a previously presented theoretical model for the photothermal radiometric ͑PTR͒ signal from an Si wafer excited by a laser of arbitrary wavelength is presented. A multiparameter fitting algorithm is developed and is used to fit experimental frequency scans to the theoretical model. The recombination lifetime and surface recombination velocity values extracted from the fits are consistent for all of the experiments performed. The diffusion coefficients for the more strongly absorbed excitation wavelengths are greater than those measured when using deeper penetrating excitation wavelengths. This discrepancy is discussed in terms of the dependence of the PTR signal on injected carrier densities and the nonlinearity of the PTR signal with temperature. The sensitivity of the PTR signal to a localized defect is shown to increase with the proximity of the defect to the centroid of the injected carrier density. The method amounts to carrier-density-wave depth profilometry of the relevant electronic transport parameters.

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Section: Experimental Methodsmentioning

confidence: 99%

Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects

Shaughnessy

Mandelis

2003

Journal of Applied Physics

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“…Iron mapping based on infrared photothermal radiometry has also been recently developed. 20 All of these techniques rely on the underlying principle initially developed by Zoth and Bergholz, 12 who showed that the interstitial iron concentration ͓Fe i ͔ can be found via measurement of the carrier lifetime ͑or, equivalently, the diffusion length͒, before and after breaking FeB pairs in a borondoped p-type silicon sample. The iron concentration is determined by 10,12 ͓Fe…”

Section: Existing Iron Mapping Techniquesmentioning

confidence: 99%

Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence

Macdonald

Tan

Trupke

2008

Journal of Applied Physics

188

125

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Imaging the band-to-band photoluminescence of silicon wafers is known to provide rapid and high-resolution images of the carrier lifetime. Here, we show that such photoluminescence images, taken before and after dissociation of iron-boron pairs, allow an accurate image of the interstitial iron concentration across a boron-doped p-type silicon wafer to be generated. Such iron images can be obtained more rapidly than with existing point-by-point iron mapping techniques. However, because the technique is best used at moderate illumination intensities, it is important to adopt a generalized analysis that takes account of different injection levels across a wafer. The technique has been verified via measurement of a deliberately contaminated single-crystal silicon wafer with a range of known iron concentrations. It has also been applied to directionally solidified ingot-grown multicrystalline silicon wafers made for solar cell production, which contain a detectible amount of unwanted iron. The iron images on these wafers reveal internal gettering of iron to grain boundaries and dislocated regions during ingot growth.

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“…1 It was derived from the well-known infrared photothermal radiometry ͑PTR͒, a technique extensively used in semiconductor analysis. [2][3][4][5][6] Both techniques rely on the measure of infrared radiation from an optically excited region of the sample. When a semiconductor is optically excited by an intensity modulated laser beam with photon energy h greater than the fundamental energy gap E g , absorption will occur, and a net amount of free carriers will be generated, in addition to the existing intrinsic carrier density.…”

Section: ͑Received 24 February 2003; Accepted 14 April 2003͒mentioning

confidence: 99%

Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry

Batista

Mandelis

Shaughnessy

2003

Applied Physics Letters

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A recently introduced infrared photocarrier radiometry technique has been used to determine the temperature dependence of carrier mobility in Si wafers. In addition, its potential to determine simultaneously the carrier lifetime, diffusion coefficient, and surface recombination velocity is reported. This noncontact, nonintrusive, and all-optical technique relies on the detection of infrared radiation from harmonically excited free carriers (pure electronic diffusion-wave detection). Using a multiparameter fitting to a complete theory, the results showed that the lifetime increases with temperature, the diffusion coefficient decreases [D(T)∼T−1.5], and the temperature dependence of carrier mobility is μ(T)=(1.06±0.07)×109×T−2.49±0.01 cm2/V s.

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Minority carrier lifetime and iron concentration measurements on p-Si wafers by infrared photothermal radiometry and microwave photoconductance decay

Cited by 32 publications

References 12 publications

Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects

Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects

Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence

Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry

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