Theoretical analysis of pure effects of strain and quantum confinement on differential gain in InGaAsP/lnP strained-layer quantum-well lasers

Seki, S.; Yamanaka, T.; Lui, W.W.; Yoshikuni, Y.; Yokoyama, K.

doi:10.1109/3.283798

Cited by 63 publications

(20 citation statements)

References 48 publications

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“…These values are close to commonly accepted value of 6.5 meV, which corresponds to the lifetime of 0.1 ps. 26,27 The dependence of ␥(T) was shown to be an important factor for modeling of the temperature dependence of modal gain in 1.3 m lasers. 12 The calculated gain spectra and interband absorption coefficient were used to obtain the temperature dependence of carrier density ͑see Fig.…”

Section: ͓S0003-6951͑99͒01019-0͔mentioning

confidence: 99%

Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers

Andreev

Donetsky

1999

Applied Physics Letters

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We have carried out the microscopic calculations of Auger recombination and interband absorption in InGaAsSb/AlGaAsSb quantum-well (QW) lasers operating within wavelength range 2.3–2.6 μm. The calculations show that the dominant Auger process in these laser structures is the process with hole excitation from the quantized level in QW to the continuous spectrum. The total Auger coefficient shows a weak temperature dependence. Based on the results of calculations and recent measurements of the heterobarrier hole leakage current and modal gain in 2.3 μm InGaAsSb QW lasers, we have calculated the temperature dependence of the threshold current. It was shown that a significant value of the Auger coefficient and the temperature dependence of laser gain are the major factors determining the temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb QW lasers.

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Section: ͓S0003-6951͑99͒01019-0͔mentioning

confidence: 99%

Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers

Andreev

Donetsky

1999

Applied Physics Letters

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“…2b) is wider than that of the LM structure (Fig. 2a); as a result, there is a bigger differential gain and lower threshold current density (Seki et al 1994). The TS structure, however, (as shown in Fig.…”

Section: Resultsmentioning

confidence: 93%

Tensile-strained 1.3 μm InGaAs/InGaAlAs quantum well structure of high temperature characteristics

Bae

Lee

2008

Opt Quant Electron

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A new tensile strained InGaAs/InGaAlAs quantum well structure in the 1.3 µm wavelength region is proposed for high temperature characteristics via quantum well band structure and optical gain calculations. To obtain such features, a tensile-strained InGaAs/InGaAlAs quantum well structure, which emits light dominated by TM polarization, is considered. This proposed structure has very high temperature characteristics (T 0 > 130 K) due to its high density of state at the first transition edge. This results clearly show the potential of tensile strained quantum well structure usage for the high temperature operation of quantum well semiconductor lasers.

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“…This mechanism of gain improvement, however, works well only for compressive strain level up to 1% [21]. Strain values beyond that range have minor effect on the band-edge heavy-hole DOS, since at such a high strain the heavy-hole and light-hole subbands are already well separated in energy.…”

Section: Discussionmentioning

confidence: 91%

Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers

Chen

Donetsky

Shterengas

et al. 2008

IEEE J. Quantum Electron.

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Abstract-InGaAsSb/AlGaAsSb quantum well (QW) diode laser structures with either 1% or 1.5% compressively strained QWs were grown on GaSb substrates by molecular beam epitaxy. Widestripe lasers fabricated from structures of both types have roomtemperature operating wavelengths near 2.3 microns. The roomtemperature threshold current density of 1-mm-long uncoated devices with 1.5% strained QWs was lower than threshold current density of the 1.0% strained QW devices by nearly a factor of two (120 A/cm 2 versus 230 A/cm 2 ). Experiment shows that the reduction in threshold current density with increasing QW strain is related to the increase in differential gain and decrease in transparency current density. Optical gain calculations prove that improvement of the QW hole confinement reduces the threshold carrier concentration in laser structures with heavily strained low arsenic content quantum wells.Index Terms-Mid-infrared, GaSb-based, type-I, high power, heavy compressive strain, differential gain, hole confinement.

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Theoretical analysis of pure effects of strain and quantum confinement on differential gain in InGaAsP/lnP strained-layer quantum-well lasers

Cited by 63 publications

References 48 publications

Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers

Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers

Tensile-strained 1.3 μm InGaAs/InGaAlAs quantum well structure of high temperature characteristics

Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers

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