Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers

Chen, Jianfeng; Donetsky, D.; Shterengas, L.; Kisin, Mikhail V.; Kipshidze, G.; Belenky, Gregory

doi:10.1109/jqe.2008.2002104

Cited by 28 publications

(25 citation statements)

References 19 publications

(17 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In mid-infrared GaInAsSb devices, carrier leakage occurs mainly through the valence band due to the small valence band offset between the quantum well and barrier layers. Improved carrier confinement has been achieved independently, with both increased levels of compressive strain, and through the larger valence band offset offered by quinternary AlGaInAsSb barriers [17], [18]. Improvements in carrier confinement has been the main pathway in achieving room temperature and CW operation well above 3 μm.…”

Section: Introductionmentioning

confidence: 99%

Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

Eales

Marko

Ikyo

et al. 2017

IEEE J. Select. Topics Quantum Electron.

View full text Add to dashboard Cite

Abstract-The efficiency limiting mechanisms in type-I GaInAsSb-based quantum well (QW) lasers, emitting at 2.3 µm, 2.6 µm and 2.9 µm, are investigated. Temperature characterization techniques and measurements under hydrostatic pressure identify an Auger process as the dominant non-radiative recombination mechanism in these devices. The results are supplemented with hydrostatic pressure measurements from three additional type-I GaInAsSb lasers, extending the wavelength range under investigation from 1.85-2.90 μm. Under hydrostatic pressure, contributions from the CHCC and CHSH Auger mechanisms to the threshold current density can be investigated separately. A simple model is used to fit the non-radiative component of the threshold current density, identifying the dominance of the different Auger losses across the wavelength range of operation. The CHCC mechanism is shown to be the dominant non-radiative process at longer wavelengths (> 2 μm). At shorter wavelengths (< 2 μm) the CHSH mechanism begins to dominate the threshold current, as the bandgap approaches resonance with the spin-orbit split-off band.

show abstract

Section: Introductionmentioning

confidence: 99%

Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

Eales

Marko

Ikyo

et al. 2017

IEEE J. Select. Topics Quantum Electron.

View full text Add to dashboard Cite

show abstract

“…High power GaSb-based diode lasers have been reported in this spectral region [1]- [9]. Studies on the role of compressive strain above 1% on the threshold and efficiency of GaSb-based diode lasers have been performed [10], [11]. It was demonstrated that increasing the compressive strain from 1 to 1.5% in GaInAsSb QWs improves both the differential gain and the threshold current density of diode lasers.…”

Section: Introductionmentioning

confidence: 99%

High-Power 2.2-$\mu$m Diode Lasers With Heavily Strained Active Region

Liang

Chen

Kipshidze

et al. 2011

IEEE Photon. Technol. Lett.

Self Cite

View full text Add to dashboard Cite

High-power 2.2-m diode lasers and their arrays were designed and fabricated. Laser heterostructures were grown using solid-source molecular beam epitaxy on GaSb substrates. The device active regions contained two 1.5% compressively strained GaInAsSb quantum wells. Heavy compressive strain in the active region ensured strong carrier confinement and high differential gain. A broadened waveguide design approach was utilized to obtain an internal optical loss below 4 cm and a threshold current density below 100 A cm . Individual high-power lasers produced 1.6 W of continuous-wave (CW) multimode power at room temperature from a single 100-m-wide aperture. Linear laser arrays generated more than 25 W of quasi-continuous wave output power. The device power conversion efficiencies were better than 20% in peak and above 10% at maximum output power level.

show abstract

“…The utilization of the compressive strain was previously identified as an effective way to improve hole confinement in QWs. 2 The barrier and waveguide material was the quinary AlInGaAsSb alloy lattice-matched to GaSb. The use of the quinary In-containing material as QW barriers also improves hole confinement.…”

Section: Diode Lasers Operating At Rt In the 3-35 μπι Spectral Rangementioning

confidence: 99%

“…In QWs compressively strained above 1%, the top valence subband has an in-plane effective mass that is rather close to electron effective mass. 2 The resulting reduced density of states facilitates separating the quasi-Fermi levels in narrow bandgap active QWs under injection. Since bulk transition matrix element does not show pronounced material bandgap dependence, 1 this leads to improved differential gain in narrow bandgap QWs.…”

Section: Introductionmentioning

confidence: 99%