High-Power 2.2-$\mu$m Diode Lasers With Heavily Strained Active Region

Liang, Rui; Chen, Jianfeng; Kipshidze, G.; Westerfeld, David; Shterengas, L.; Belenky, Gregory

doi:10.1109/lpt.2011.2114647

Cited by 37 publications

(27 citation statements)

References 14 publications

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“…In laser heterostructures with broadened waveguides, the QW optical confi nement is traded for reduced overlap of the optical fi eld with the doped cladding region, in order to reduce internal optical loss. Figure 11.4 shows the fl at band diagram of the central part of a broadened waveguide heterostructure of 2.2 µm emitting high power diode lasers (Liang et al ., 2011 ). The laser heterostructure was grown by solid-source molecular beam epitaxy (MBE) on Te-doped GaSb substrates in a Veeco GEN-930 modular system equipped with valved cracker cells for As and Sb.…”

Section: Diode Lasers Operating Below 25 μMmentioning

confidence: 99%

“…20°C 1 mm, uncoated 11.6 Current dependences of the modal gain spectra measured at 17°C for 1 mm long uncoated devices. The inset shows the corresponding dependence of the peak modal gain on current (Liang et al ., 2011 ).…”

Section: μM Diode Lasers With Asymmetric Waveguide and Improved Beamentioning

confidence: 99%

“…In laser heterostructures with 11.7 (a) Fast and slow axis far fi eld distributions measured for 2 mm long, AR/HR coated single emitter lasers; (b) near fi eld distribution measured for 1 mm long, AR/HR coated lasers (Liang et al ., 2011 ). asymmetric waveguides, the beam quality can be improved by spreading the optical mode selectively into n-cladding but not into p-cladding (Ryvkin and Avrutin, 2005 ).…”

Section: © Woodhead Publishing Limited 2013mentioning

confidence: 99%

See 2 more Smart Citations

Gallium antimonide (GaSb)-based type-I quantum well diode lasers: recent development and prospects

Belenky¹,

Shterengas²,

Kisin³

et al. 2013

Semiconductor Lasers

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Section: Diode Lasers Operating Below 25 μMmentioning

confidence: 99%

Section: μM Diode Lasers With Asymmetric Waveguide and Improved Beamentioning

confidence: 99%

Section: © Woodhead Publishing Limited 2013mentioning

confidence: 99%

See 1 more Smart Citation

Gallium antimonide (GaSb)-based type-I quantum well diode lasers: recent development and prospects

Belenky¹,

Shterengas²,

Kisin³

et al. 2013

Semiconductor Lasers

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“…In mid-infrared GaInAsSb devices, carrier leakage occurs mainly through the valence band due to the small valence band offset between the quantum well and barrier layers. Improved carrier confinement has been achieved independently, with both increased levels of compressive strain, and through the larger valence band offset offered by quinternary AlGaInAsSb barriers [17], [18]. Improvements in carrier confinement has been the main pathway in achieving room temperature and CW operation well above 3 μm.…”

Section: Introductionmentioning

confidence: 99%

Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

Eales

Marko

Ikyo

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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Abstract-The efficiency limiting mechanisms in type-I GaInAsSb-based quantum well (QW) lasers, emitting at 2.3 µm, 2.6 µm and 2.9 µm, are investigated. Temperature characterization techniques and measurements under hydrostatic pressure identify an Auger process as the dominant non-radiative recombination mechanism in these devices. The results are supplemented with hydrostatic pressure measurements from three additional type-I GaInAsSb lasers, extending the wavelength range under investigation from 1.85-2.90 μm. Under hydrostatic pressure, contributions from the CHCC and CHSH Auger mechanisms to the threshold current density can be investigated separately. A simple model is used to fit the non-radiative component of the threshold current density, identifying the dominance of the different Auger losses across the wavelength range of operation. The CHCC mechanism is shown to be the dominant non-radiative process at longer wavelengths (> 2 μm). At shorter wavelengths (< 2 μm) the CHSH mechanism begins to dominate the threshold current, as the bandgap approaches resonance with the spin-orbit split-off band.

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“…GaSb-based type-I quantum well (QW) diode laser technology addresses this demand providing compact lasers operating in spectral region from 1.9 to 3.4 µm, ex. [1,2,3]. The devices operate at voltages below 2 V and demonstrate RT CW power conversion efficiencies in excess of 25% near 2 µm and above 8 % at 3 µm [4].…”

mentioning

confidence: 99%

Diode lasers operating in spectral range from 1.9 to 3.5 μm

Shterengas

Kipshidze

Hosoda

et al. 2012

ISLC 2012 International Semiconductor Laser Conference

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Mid-infrared lasers operating at room temperature (RT) in continuous wave (CW) mode are in demand for a variety of applications including laser detection and ranging, spectroscopy and infrared countermeasures. GaSb-based type-I quantum well (QW) diode laser technology addresses this demand providing compact lasers operating in spectral region from 1.9 to 3.4 µm, ex. [1,2,3]. The devices operate at voltages below 2 V and demonstrate RT CW power conversion efficiencies in excess of 25% near 2 µm and above 8 % at 3 µm [4]. These results show that Auger recombination does not preclude the CW RT operation of mid-infrared diode lasers. Low CW RT threshold current densities below 100 and 200 A/cm 2 obtained for 2 and 3 µm diode lasers, respectively revealed a bonus of the narrow bandgap QWs for laser development arising from the low density of states. This fundamental advantage became apparent in experiments after the optical and carrier confinement in active GaInAsSb QWs [5] were improved. This was achieved after the quaternary AlGaAsSb barrier material was replaced with the quinary AlGaInAsSb alloys [6]. In this work we report on progress in development of the metamorphic GaSb-based laser heterostructures and fabrication of the diffraction limited laser diodes.The utilization of a five component alloy enabled independent control over the valence and conduction band edge positions in the QW barrier and waveguide core materials. This flexibility allowed for design optimization that led to significant improvement of the device performance parameters and enabled fabrication of the first generation of the diode lasers operating at RT in CW at wavelength above 3 µm with hundreds of mW of output power. Similar flexibility in the design of the QWs is expected to open novel band engineering opportunities to optimize laser heterostructures for improved CW RT operation and extended wavelength range. One possible way to acquire this flexibility is to establish a growth technology that allows treating the lattice parameter of the device heterostructure as a design variable. This can be achieved by growing compositionally graded buffer layers to mediate the lattice mismatch between the substrate and the device heterostructure [7,8,9]. We designed and developed GaSb-based diode lasers grown onto GaInSb and AlGaInSb metamorphic buffers that increase the lattice constant by 1.6% above that of GaSb. The devices demonstrate high power RT operation with 200 mW of CW output power near 3 µm (Figure 1). The peculiarities of the metamorphic growth and potential to extend the operating wavelength, improve the device parameters and grow antimonide-based materials on GaAs will be discussed.The single spatial mode narrow ridge waveguide diode lasers were fabricated by both dry and wet etching techniques. We have developed two step selective wet etching methodology producing single spatial mode deep etched ridge waveguide lasers emitting above 100 mW CW in the 2 to 2.3 µm spectral region and above 15 mW CW near 3 µm. Experiment showed that the no...

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High-Power 2.2-$\mu$m Diode Lasers With Heavily Strained Active Region

Cited by 37 publications

References 14 publications

Gallium antimonide (GaSb)-based type-I quantum well diode lasers: recent development and prospects

Gallium antimonide (GaSb)-based type-I quantum well diode lasers: recent development and prospects

Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

Diode lasers operating in spectral range from 1.9 to 3.5 μm

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High-Power 2.2-$\mu$m Diode Lasers With Heavily Strained Active Region

Cited by 37 publications

References 14 publications

Gallium antimonide (GaSb)-based type-I quantum well diode lasers: recent development and prospects

Gallium antimonide (GaSb)-based type-I quantum well diode lasers: recent development and prospects

Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

Diode lasers operating in spectral range from 1.9 to 3.5 &#x03BC;m

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Diode lasers operating in spectral range from 1.9 to 3.5 μm