Gallium antimonide (GaSb)-based type-I quantum well diode lasers: recent development and prospects

Belenky, Gregory; Shterengas, L.; Kisin, Mikhail V.; Hosoda, Takashi

doi:10.1533/9780857096401.3.441

Cited by 16 publications

(17 citation statements)

References 82 publications

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“…Here, we report the demonstration of type-I IC lasers without using quinary AlGaInAsSb barrier layers. These IC lasers were able to lase at wavelengths near 3.2 lm at temperatures up to 365 and 305 K in pulsed and cw modes, respectively, which is comparable to the reported operating temperatures of the state-of-art type-I GaSb-based lasers [1][2][3] and recently reported type-I IC lasers 22 at similar wavelengths.…”

Section: Type-i Interband Cascade Lasers Near 32 Lmsupporting

confidence: 83%

“…Yuchao Jiang, 1 Lu Li, 1 Rui Q. Yang, 1,a) James A. Gupta, 2 Geof C. Aers, 2 Emmanuel Dupont, 2 Jean-Marc Baribeau, 2 Xiaohua Wu, 2 Interband cascade (IC) lasers have been demonstrated based on type-I InGaAsSb/AlAsSb quantum well (QW) active regions. These type-I IC lasers are composed of 6-cascade stages and InAs/AlSb superlattice cladding layers.…”

Section: Type-i Interband Cascade Lasers Near 32 Lmmentioning

confidence: 99%

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Type-I interband cascade lasers near 3.2 μm

Jiang

Yang

et al. 2015

Applied Physics Letters

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Interband cascade (IC) lasers have been demonstrated based on type-I InGaAsSb/AlAsSb quantum well (QW) active regions. These type-I IC lasers are composed of 6-cascade stages and InAs/AlSb superlattice cladding layers. In contrast to the use of quinary AlGaInAsSb barriers for active region in previous type-I QW lasers, the type-I QW active region in each stage is sandwiched by digitally graded multiple InAs/AlSb QW electron injector and GaSb/AlSb QW hole injector. The fabricated type-I IC lasers were able to operate in continuous wave and pulsed modes at temperatures up to 306 and 365 K, respectively. The threshold current densities of broad-area lasers were around 300 A/cm2 at 300 K with a lasing wavelength near 3.2 μm. The implications and prospects of these initial results are discussed.

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Section: Type-i Interband Cascade Lasers Near 32 Lmsupporting

confidence: 83%

Section: Type-i Interband Cascade Lasers Near 32 Lmmentioning

confidence: 99%

Type-I interband cascade lasers near 3.2 μm

Jiang

Yang

et al. 2015

Applied Physics Letters

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“…In addition it is visible that the gain peak position can be tuned by changing the QW width. It means that such QWs have a potential applications in gas sensing where currently GaSb-based lasers are applied 32 55 . So far a positive gain has been predicted to be present for GeSn QWs with GeSiSn barriers 33 34 35 36 37 .…”

Section: Resultsmentioning

confidence: 99%

Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform

Mączko

Kudrawiec

Gładysiewicz

2016

Sci Rep

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It is shown that compressively strained Ge1−xSnx/Ge quantum wells (QWs) grown on a Ge substrate with 0.1 ≤ x ≤ 0.2 and width of 8 nm ≤ d ≤ 14 nm are a very promising gain medium for lasers integrated with an Si platform. Such QWs are type-I QWs with a direct bandgap and positive transverse electric mode of material gain, i.e. the modal gain. The electronic band structure near the center of Brillouin zone has been calculated for various Ge1−xSnx/Ge QWs with use of the 8-band kp Hamiltonian. To calculate the material gain for these QWs, occupation of the L valley in Ge barriers has been taken into account. It is clearly shown that this occupation has a lot of influence on the material gain in the QWs with low Sn concentrations (Sn < 15%) and is less important for QWs with larger Sn concentration (Sn > 15%). However, for QWs with Sn > 20% the critical thickness of a GeSn layer deposited on a Ge substrate starts to play an important role. Reduction in the QW width shifts up the ground electron subband in the QW and increases occupation of the L valley in the barriers instead of the Γ valley in the QW region.

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“…It is thus well suited for implementing a variety of high societal-impact photonic sensors or devices. High efficiency GaSb-based laser diodes (LDs) are now available in this range [2,3] and their heterogeneous integration with Silicon-based platforms is under active consideration with the objective to develop compact, cost-effective, smart sensing systems based on Si photonic integrated circuits (PICs) [4].…”

Section: Introductionmentioning

confidence: 99%

“…Only recently were high-performance GaSb mid-IR LDs epitaxially integrated on on-axis (001)Si demonstrated [8]. These LDs were grown by molecular-beam epitaxy (MBE), the only technique to date able to grow high-performance GaSb-based light sources [2,3]. Still, all these lasers were discrete devices with Fabry-Pérot cavities formed by cleaving the III-V-on-Si epitaxial wafer, a technique obviously incompatible with any PIC strategy.…”

Section: Introductionmentioning

confidence: 99%

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Monge-Bartolomé¹,

Cerba²,

Díaz-Thomas³

et al. 2020

Opt. Express

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We report on 2.3-µm etched-cavity GaSb-based laser diodes (LDs) epitaxially integrated on on-axis (001)Si and benchmarked against their cleaved facet counterparts. The LDs were grown in two steps. First, a GaSb-on-Si template was grown by metal-organic vapor phase epitaxy (MOVPE) before the growth of the LD heterostructure by molecular-beam epitaxy. Different etched-facet geometries operate in continuous wave well above room temperature, and their performance are similar to those of cleaved-cavity LDs. These results show that etching mirrors is a viable route to form laser cavities in the GaSb technology and that MOVPE GaSb-on-Si templates are a suitable platform for optoelectronic devices overgrowth.

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Gallium antimonide (GaSb)-based type-I quantum well diode lasers: recent development and prospects

Cited by 16 publications

References 82 publications

Type-I interband cascade lasers near 3.2 μm

Type-I interband cascade lasers near 3.2 μm

Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

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